Polycrystalline silicon

About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.

Quinhydrone/Methanol Treatment for the Measurement of Carrier Lifetime in Silicon Substrates : Semiconductors

Abstract: Quinhydrone/methanol treatment for the measurement of carrier lifetime in crystalline silicon substrates has been investigated. To estimate the surface passivation effect, the lifetimes of the silicon substrates were measured using the microwave photoconductive decay method. The measured lifetime is dependent on quinhydrone concentration and passivation time. The 0.01 mol/dm3 quinhydrone/methanol treatment exhibited a good passivation effect, and a very low surface recombination velocity was obtained. The quinhydrone/methanol treatment can provide a reliable lifetime map of silicon wafers since a constant lifetime value without degradation can be obtained. Therefore, the quinhydrone/methanol treatment can be used for estimating the bulk lifetime of silicon substrates.

Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantation

Abstract: Thin polycrystalline silicon films have been amorphized by silicon ion implantation and subsequently annealed at 525 °C for various lengths of time. Due to channeling of the ion beam through properly oriented polycrystalline grains, a few grains survived the implantation step and acted as seeds for solid phase epitaxial recrystallization of the film. This technique makes it possible to increase the grain size of thin polycrystalline films at very low temperatures.

Structure and morphology of polycrystalline silicon‐single crystal silicon interfaces

Abstract: Using high resolution transmission electron microscopy, morphological aspects of the polycrystalline silicon (polysilicon)‐single crystal silicon interface have been correlated to the surface treatment used prior to polysilicon deposition, and to high‐temperature annealing. Specimens which were chemically oxidized prior to the deposition exhibited a continuous layer of amorphous oxide ∼15 A thick; high‐temperature annealing results in the formation of small discontinuities in this oxide, and thus small regions of epitaxial realignment within the polysilicon layer. Specimens which were etched in HF prior to deposition were characterized by nearly oxide‐free interfaces, and, following high‐temperature annealing, exhibited regions of epitaxial realignment an order of magnitude larger than those found in the chemically oxidized samples.

Doping and crystallographic effects in Cl‐atom etching of silicon

Abstract: Absolute rates for the intrinsic reaction between Cl atoms and surfaces of P‐doped polycrystalline silicon, P‐doped Si(100) and As, Sb‐doped Si(111) substrates were measured for the first time as a function of dopant concentration (Ne) and substrate temperature in a downstream reaction system. This study clearly shows that when there is no ion bombardment, increasing Ne increases the Si‐Cl reaction rate even when silicon is lightly doped (∼1015 cm−3), in contrast to in‐discharge studies. Moreover, results showed that crystal orientation influences the Cl‐Si reaction more than Ne, for Ne<1020 cm−3. The data are fitted to a modified Arrhenius expression, R=νNγenClT1/2e−E/kT, with R the etch rate and nCl the gas phase Cl concentration. The calculated values of the activation energy E are 4.1–4.7 kcal/mole for all doping levels and crystallographic orientations. Therefore, the doping effect is manifested solely in the preexponential (νNγe) of the Arrhenius expression, and the data qualitatively agree with a charge‐transfer mechanism which facilitates chemisorption of chlorine.