Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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TL;DR: In this paper, the pinhole formation induced in the thermal processing of the poly-Si on oxide (POLO) junctions is investigated and the resulting pinhole densities are in the range of 6.6
Abstract: In the pursuit of ever higher conversion efficiencies for silicon photovoltaic cells, polycrystalline silicon (poly-Si) layers on thin silicon oxide films were shown to form excellent carrier-selective junctions on crystalline silicon substrates. Investigating the pinhole formation that is induced in the thermal processing of the poly-Si on oxide (POLO) junctions is essential for optimizing their electronic performance. We observe the pinholes in the oxide layer by selective etching of the underlying crystalline silicon. The originally nm-sized pinholes are thus readily detected using simple optical and scanning electron microscopy. The resulting pinhole densities are in the range of 6.6 × 106 cm−2 to 1.6 × 108 cm−2 for POLO junctions with selectivities close to S10 = 16, i.e., saturation current density J0c below 10 fA/cm2 and contact resistivity ρc below 10 mΩcm2. The measured pinhole densities agree with values deduced by a pinhole-mediated current transport model. Thus, we conclude pinhole-mediated current transport to be the dominating transport mechanism in the POLO junctions investigated here.
58 citations
Patent•
11 Apr 1983
TL;DR: In this paper, a thin-film MOS transistor was used in active matrix liquid crystal display devices with a plurality of picture elements arranged in a matrix, each picture element having a thin film MOS transistor as a switching element.
Abstract: A thin film MOS transistor includes a silicon layer (202) whose thickness, at least in the channel region is less than 2500 ANGSTROM . The silicon layer may be a polycrystalline silicon layer and its thickness in the channel region may be less than its thickness in the source and drain regions. Such thin film MOS transistors may be used in active matrix liquid crystal display devices having a plurality of picture elements arranged in a matrix, each picture element having a thin film MOS transistor as a switching element.
58 citations
TL;DR: In this paper, an explanation for the strong dependence of electrical conductivity of semi-insulating polycrystalline silicon films on oxygen content is given, where the authors assume a shell structure such that each Si grain is surrounded by a layer of SiO2, the thickness of which is related to the oxygen content of the film.
Abstract: An explanation is given for the strong dependence of electrical conductivity of semi‐insulating polycrystalline silicon films on oxygen content The proposed model assumes a shell structure such that each Si grain is surrounded by a layer of SiO2, the thickness of which is related to the oxygen content of the film The conduction proceeds by tunneling of thermally generated carriers through the oxide layers separating adjacent grains The model properly predicts the dependence of the low‐field conductivity on both oxygen concentration and temperature without any adjustable parameters Evidence for oxide barrier lowering for barrier thicknesses <5 A is observed
58 citations
Patent•
12 May 1992
TL;DR: In this paper, a plurality of thin polycrystalline silicon solar cells formed on a ceramic substrate and which are electrically series connected to form a monolithically interconnected submodule are presented.
Abstract: A plurality of thin polycrystalline silicon solar cells formed on a ceramic substrate and which are electrically series connected to form a monolithically interconnected submodule. Adjacent solar cells are electrically separated by a vertical trench and electrically connected by interconnects located below the light receiving surface of each solar cell. The submodules are provided with external electrical contacts for electrically connecting into a photovoltaic module assembly.
58 citations
TL;DR: In this paper, a dual dielectric gate insulator has been developed for bottom-gate thin-film transistors to simplify fabrication of both high quality amorphous and polycrystalline thin film transistors on the same glass substrate.
Abstract: Selective dehydrogenation and crystallization are realized by a three‐step incremental increase in laser energy density X‐ray diffraction and transmission electron microscopy show that the polycrystalline grains formed with this three‐step process are similar to those after a conventional one‐step laser crystallization of unhydrogenated amorphous silicon The grain size increases with increasing laser energy density up to a peak value of a few micrometers The grain size decreases with further increases in laser energy density The transistor field effect mobility is correlated to the material properties, increasing gradually with laser energy density until reaching its maximum value Thereafter, the transistors suffer from leakage through the gate insulators A dual dielectric gate insulator has been developed for these bottom‐gate thin film transistors Our structure simplifies fabrication of both high quality amorphous and polycrystalline thin film transistors on the same glass substrate We discuss t
58 citations