Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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TL;DR: In this paper, a novel process for increasing the grain size in polycrystalline silicon films at temperatures near 500°C was described, which could lead to large-grain, uniformly oriented polysilicon films on amorphous surfaces.
Abstract: The letter describes a novel process for increasing the grain size in polycrystalline silicon films at temperatures near 500°C. This process, once perfected, could lead to mono-crystalline or large-grain, uniformly oriented polysilicon films on amorphous surfaces.
51 citations
TL;DR: In this article, the pinhole density in poly-Si on oxide (POLO)-junctions with excellent electrical properties was determined using optical microscopy and scanning electron microscopy.
51 citations
Patent•
14 Jun 2007
TL;DR: In this article, the vent gas from the Siemens reactor was used as a feed gas to the fluidized bed reactor to produce polycrystalline silicon, which was then fed to the same source.
Abstract: A fluidized bed reactor and a Siemens reactor are used to produce polycrystalline silicon. The process includes feeding the vent gas from the Siemens reactor as a feed gas to the fluidized bed reactor.
51 citations
Patent•
15 Jun 1979TL;DR: In this paper, an ion implant step compatible with a self-aligned N-channel silicon-gate process is used to make integrated circuit resistor elements ideally suited for load devices in static MOS RAM cells.
Abstract: Integrated circuit resistor elements ideally suited for load devices in static MOS RAM cells are made in second-level polycrystalline silicon by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The second-level polysilicon is insulated from first-level polysilicon by multi-layer insulation; first, a thermal oxide layer provides better edge breakdown characteristics for transistors, then secondly a layer of doped deposited oxide provides improved step coverage, and finally an undoped deposited oxide is used to prevent out diffusion from doped oxide to second level polysilicon which would change the characteristics of the resistors.
50 citations
TL;DR: In this paper, the effect of repeated bending of flexible p-channel low-temperature polycrystalline-silicon thin-film transistors employing an ultra-lowtemperature process was investigated.
Abstract: This letter investigates the effect of repeated bending of flexible p-channel low-temperature polycrystalline–silicon thin-film transistors employing an ultra-low-temperature process (<673 K). Experimental results reveal that interface state density (Nit) and grain boundary trap density (Ntrap) after 10 000 width-axis tensile strain bending iterations are more pronounced than after equivalent width-axis compressive strain bending. Extracted interface and grain boundary traps both increase, which elevate trap assisted leakage. Furthermore, the bending distorts the Si–Si bonds in the polycrystalline silicon (Poly-Si) film, which causes more significant negative bias temperature instability (NBTI) degradation because strain-induced weak Si–Si bonds can react with dissociated H during NBTI stress.
50 citations