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Polycrystalline silicon

About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.


Papers
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Journal ArticleDOI
TL;DR: In this article, the role of implantation damage in enhancing dopant diffusion in silicon has been investigated and validated, while simultaneously revealing some important new materials issues which will impact semiconductor processing in coming device generations.

49 citations

Patent
23 May 2002
TL;DR: In this article, a process for preparing polycrystalline silicon comprising the steps of reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilicane and disilane described by formula HnCl6-nSi2 is described.
Abstract: A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6-nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600°C to 1200°C t hereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes

49 citations

Patent
04 Dec 1997
TL;DR: In this article, the authors proposed a method of manufacturing a thin film having a process of depositing amorphous layers and a procedure of recrystallizing this amorphou material.
Abstract: In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

49 citations

Patent
13 May 2008
TL;DR: In this paper, a polysilicon rod for FZ applications is described, which is obtained by deposition of high-purity silicon from a silicon-containing reaction gas, which has been thermally decomposed or reduced by hydrogen, on a filament rod.
Abstract: The invention relates to a polysilicon rod for FZ applications obtainable by deposition of high-purity silicon from a silicon-containing reaction gas, which has been thermally decomposed or reduced by hydrogen, on a filament rod. The polysilicon rod contains, surrounding the filament rod, an inner zone having but few needle crystals, small in size, an outer zone having a relatively small amount of larger needle crystals, and a smooth transition zone between the inner and outer zones. The polysilicon rods are obtained in high yield and can be refined in one pass in an FZ process.

49 citations

Journal ArticleDOI
TL;DR: In this paper, flash lamp annealing of amorphous silicon (a-Si) films without thermal damage onto glass substrates was used for polycrystalline silicon formation.
Abstract: Polycrystalline silicon (poly-Si) films as thick as 4.5 µm are prepared by flash lamp annealing (FLA) of amorphous silicon (a-Si) films without thermal damage onto glass substrates. The a-Si films are deposited by catalytic chemical vapor deposition (Cat-CVD) at 320 °C. Since the hydrogen content in Cat-CVD a-Si films is as low as 3 at. %, they are easily converted to poly-Si without any dehydrogenation treatment. Chromium (Cr) films 60 nm thick are coated onto glass substrates to achieve high area uniformity of poly-Si formation. Secondary ion mass spectroscopy (SIMS) reveals that no diffused Cr atoms are detected inside poly-Si films and that crystallization is not the well-known metal-induced crystallization. Raman spectra from the poly-Si films show high crystallinity close to 1, and the photoluminescence (PL) spectrum demonstrates clear band-to-band transition, indicating the formation of device-quality poly-Si by FLA of Cat-CVD a-Si.

49 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202343
2022130
2021122
2020313
2019498
2018534