Polycrystalline silicon

About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.

Sensor with polycrystalline silicon resistors

Abstract: Sensor with polycrystalline silicon resistors which are applied to a substrate and are covered with a dielectric passivating layer, characterized by the feature that the resistors are thermally adapted by targeted adjustment of their dopings and by suitable healing, and are balanced by laser trimming.

Method of manufacturing a semiconductor device, in which metal silicide is provided in a self-registered manner

Abstract: A method of manufacturing a semiconductor device comprising a field effect transistor having an insulated gate electrode (11) of doped polycrystalline silicon, which is provided on a surface (5) of a semiconductor substrate (1), in which further source and drain zones (17, 18) of the transistor are formed. The source and drain zones (17, 18) and the gate electrode (11) are provided in a self-registered manner with a top layer of a metal silicide (27). According to the invention, during the formation of the gate electrode (11) in a layer of polycrystalline silicon (7), an etching mask (10) containing silicon nitride is used. Thus, without the gate oxide (6) lying under the layer of polycrystalline silicon (7) being covered with organic residues that can be removed only with difficulty, a gate electrode (11) can be obtained with side edges (12) directed transversely to the surface (5).

Thermal characterization of liquids and polymer thin films using a microcalorimeter

Abstract: This paper presents an integrated microfluidic thermal sensor that can be used to characterize the thermal properties of nanoliter quantities of fluids and polymer thin films. The device consists of a polycrystalline silicon (polysilicon) heater located in close proximity to the hot junctions of p+-polysilicon/gold microthermopiles fabricated on a thermally isolated membrane. ac calorimetric measurements were performed by introducing a periodic heat signal using the heater and detecting the frequency-dependent thermal signal response in the presence of various fluids and polymers. The thermal conductivity of different fluids and five typical polymers used in microfabrication was measured using this device.

Method of fabricating an improved polycrystalline silicon thin film transistor

Abstract: A process of fabricating an improved transistor on a polycrystalline silicon layer, wherein N and P type dopants, in approximate equal concentrations, are introduced into the layer, and the layer heated. The resultant modified polycrystalline silicon layer inhibits the migration of dopants, used to form the active regions of the device, during subsequent heating steps. An improved field effect transistor having a source region, a drain region, and channel region in a polycrystalline silicon layer, the improvement being that the polycrystalline silicon layer has approximately equal concentrations of N and P type dopants embodied therein, which serves to restrain movement of P/N junctions.

System and process for deposition of polycrystalline silicon with silane in vacuum

Abstract: SYSTEM AND PROCESS FOR DEPOSITION OF POLYCRYSTALLINE SILICON WITH SILANE IN VACUUM ABSTRACT OF THE DISCLOSURE The present invention is directed to the method and means for depositing polycrystalline silicon from silane in a vacuum. This process contemplates the use of a gas source and a means for assuring a uniform flow of gas into the deposition chamber. The deposition chamber is a hot wall furnace. The deposition zone is kept at as uniform a tem-perature as possible. The preferred temperature is 600°Cwith a workable range extending from 600°C to 700°C. While the deposition zone is profiled flat from a temperature point of view, the deposition rate over the length of the tube appears as a flattened curve. This means that at the source and exhaust portions of the tube, the deposition rates are different from that rate in the central flattened portion. The boat upon which the wafers are placed is centered within the center portion of the curve along its flattest portion. Wafers are placed perpendicular to the gas flow with a preferred spacing approximately 50 mils on center when using wafers 20 mils thick. The wafers are placed in the tube from the source input end. At the gas exhaust end, intermediate the tube and the vacuum pump, is an optical baffle. The function of the optical baffle is to collect the undeposited silane material and silicon by-products which pass through the tube. The undeposited silane material appears in the form of a brown dust which is granular silicon and silicon monoxide. This granular material forms around the exit end of the tube and in the baffle.