Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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Patent•
02 Apr 1992
TL;DR: In this article, a stopper was designed to prevent a fin from sagging, by covering a first polycrystalline silicon film and a silicon dioxide film with a second poly-crystallized silicon film, forming a side wall and a hole, and forming, on the surface, a silicon nitride film, and a third poly-polysilicon film turning to a counter electrode.
Abstract: PURPOSE:To unnecessitate a stopper and prevent a fin from sagging, by covering a first polycrystalline silicon film and a silicon dioxide film with a second polycrystalline silicon film, forming a side wall and a hole, and forming, on the surface, a silicon nitride film and a third polycrystalline silicon film turning to a counter electrode CONSTITUTION:On an Si substrate, every three layers composed of a first poly Si film 2 and an SiO2 film 3 turning to a multilayer fin type storage electrode are alternately stacked; patterning is performed; the stacked part is covered with a second poly Si film 4; by anisotropic etching, a side wall composed of the second poly Si film 4 is formed on the peripheral part of the first poly Si film 2; a hole 5 is formed at the central part of the films 2 and the films 3 so as to expose the first layer of the first poly Si film 2; by using resist for forming the hole 5 as a mask, the SiO2 film 3 is etched and completely eliminated; an Si3N4 film 6 is thinly stuck so as to cover the first poly Si film 2 and the second poly Si film 4; a third poly Si film 7 turning to a counter electrode is formed on the Si3N4 film 6 surface, thereby completing a device
47 citations
Patent•
03 Feb 1989TL;DR: A polycrystalline silicon electrode and method for its fabrication are disclosed in this article, where the electrode includes a barrier layer formed by the implantation of carbon, nitrogen, or oxygen ions between two layers.
Abstract: A polycrystalline silicon electrode and method for its fabrication are disclosed. The electrode includes a barrier layer formed by the implantation of carbon, nitrogen, or oxygen ions between two layers of polycrystalline silicon. The lower layer of polycrystalline silicon is lightly doped or undoped and the top layer is heavily doped to increase the conductivity of the electrode. The barrier layer impedes the diffusion of conductivity determining dopant impurities from one layer of polycrystalline silicon to the other.
47 citations
TL;DR: In this paper, a model was presented to account for the dose dependence of the grain size, and three mechanisms were presumed to account the final grain size: statistical variations of area coverage by the implanted ions, ion channeling, and spontaneous nucleation.
Abstract: 160‐nm polycrystalline silicon films were implanted at room temperature with 100‐keV silicon ions and subsequently annealed. The final grain size was found to increase with implant dose. A model is presented here to account for the dose dependence of the grain size. Three mechanisms were presumed to account for the final grain size: statistical variations of area coverage by the implanted ions, ion channeling, and spontaneous nucleation. Model parameters were successfully fit to the experimental data.
47 citations
TL;DR: In this paper, the authors made polycrystalline silicon (pc-Si) layers with variable grain sizes by changing the crystallization temperature of the AIC process in order to see if larger grains indeed result in better solar cells.
Abstract: Polycrystalline silicon (pc-Si) thin-films with a grain size in the range of 0.1–100 μm grown on top of inexpensive substrates are economical materials for semiconductor devices such as transistors and solar cells and attract much attention nowadays. For pc-Si, grain size enlargement is thought to be an important parameter to improve material quality and therefore device performance. Aluminum-induced crystallization (AIC) of amorphous Si in combination with epitaxial growth allows achieving large-grained pc-Si layers on nonsilicon substrates. In this work, we made pc-Si layers with variable grain sizes by changing the crystallization temperature of the AIC process in order to see if larger grains indeed result in better solar cells. Solar cells based on these layers show a performance independent of the grain size. Defect etching and electron beam induced current (EBIC) measurements showed the presence of a high density of electrically active intragrain defects. We therefore consider them as the reason fo...
47 citations
TL;DR: In this article, a method for coating polysilicon microstructures with thin, uniform and conformal coatings of SiC derived from the single source precursor, 1,3-disilabutane (DSB) has been developed.
Abstract: A method for coating released polysilicon microstructures with thin, uniform and conformal coatings of SiC derived from the single source precursor, 1,3-disilabutane (DSB) has been developed. This coating method has been successfully applied to micromechanical test devices which allow evaluation of friction and wear properties of the coating. Here, data on the coefficient of static friction of SiC coatings produced from DSB is presented. Also, a comparative wear study for devices which have been oxidized, treated with an anti-adhesion coating, and SiC coated is shown. Wear is examined by scanning electron microscopy (SEM) on devices which have been cycled repetitively under a nominal load. It is found that the application of a few nanometers-thin SiC coating provides exceptional wear resistance as well as significant reduction in friction on the microscale.
47 citations