Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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TL;DR: In this article, the effects of x-ray irradiation on the transfer and noise characteristics of excimer-laser-annealed polycrystalline silicon (poly-Si) thin-film transistors have been examined at dose levels up to 1000Gy.
Abstract: The effects of x-ray irradiation on the transfer and noise characteristics of excimer-laser-annealed polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been examined at dose levels up to 1000Gy. Parameters including mobility, threshold voltage, subthreshold swing, and leakage current, as well as flicker and thermal noise coefficients, were determined as a function of dose. In addition, the physical mechanisms of the observed changes in these parameters are analyzed in terms of radiation-generated charge in the gate oxide, at the Si–SiO2 interface, and at the grain boundaries. The results of the studies indicate that poly-Si TFTs exhibit sufficient radiation tolerance for the use in active-matrix flat-panel imagers for most medical x-ray applications.
46 citations
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06 Mar 1981TL;DR: In this article, the surface termination of a p-n junction of a semiconductor device is passivated with semi-insulating material which is deposited on a thin layer of insulating material formed at the bared semiconductor surface by a chemical conversion treatment at a temperature above room temperature.
Abstract: The surface termination of a p-n junction of a semiconductor device is passivated with semi-insulating material which is deposited on a thin layer of insulating material formed at the bared semiconductor surface by a chemical conversion treatment at a temperature above room temperature. The layer may be formed by oxidizing the semiconductor material of the body for example in dry oxygen between 300° C. and 500° C. or in an oxidizing liquid containing for example hydrogen peroxide or nitric acid at for example 80° C. The layer is sufficiently thin to permit conduction (e.g. by tunnelling) between the semi-insulating material and the surface but thick enough to reduce said conduction so that when the junction is reverse-biased leakage current flows further along the semi-insulating material before flowing out to the surface across the layer. This increases the spread of the junction depletion layer along the surface thereby permitting a high breakdown voltage even with a high resistivity for the material. The thin layer can also act as a barrier against gettering of lifetime-killers (e.g. gold) from the semiconductor body by the semi-insulating material. The semi-insulating material may be based on amorphous or polycrystalline silicon or a chalcogenide.
46 citations
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TL;DR: In this paper, a two-step annealing process on glass substrates was used to construct thin-film transistors (TFTs) from poly-Si crystallized polysilicon.
Abstract: Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature furnace annealing and high-temperature rapid thermal annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step annealing material exhibit better measured characteristics than those obtained by using conventional furnace annealing. >
46 citations
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TL;DR: In this article, a tensile tester for thin polycrystalline silicon (poly-Si) thin films was developed to evaluate the reliability of the microelectro- mechanical devices.
Abstract: A new tensile tester for thin films was developed to evaluate the reliability of the microelectro- mechanical devices. This tester uses the grip that fixes a thin film specimen to a probe by electrostatic force. We applied this tester for polycrystalline silicon (poly-Si) thin films prepared under various conditions. The microstructure of the film is controlled by the crystallizing temperature. The process conditions and the microstructures that contribute to the strength of poly-Si film are identified by the tensile strength and the fracture toughness. The mean tensile strength of each specimen size ranges from 1.8 to 3.7 GPa, and the fracture toughness calculated from the strength of the notched specimen ranges from 1.9 to 4.5 MN/m3/2. The 1000°C annealed film has higher strength and toughness than the other films because of the high annealing temperature and the small grain size. The contributions to the strength are evaluated by the additional annealing at 1000°C for the low temperature annealed films.
46 citations
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TL;DR: In this paper, the requirements on thin-film transistors, particularly in terms of current-drive and parameter uniformity, for active-matrix organic light-emitting diode displays, were analyzed.
Abstract: Requirement on thin-film transistors, particularly in terms of current-drive and parameter uniformity, for active-matrix organic light-emitting diode displays, was analyzed. Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology was shown to satisfy such and other demands. Though pixel designs involving more transistors were certainly advantageous, appropriate biasing scheme allowed a simpler and larger aperture-ratio two-transistor design. As a demonstration, active matrices were fabricated and integrated with organic light-emitting diodes to make monochrome video display panels, each consisting of 120 rows and 160 columns.
46 citations