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Polycrystalline silicon

About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.


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Patent
06 Oct 2006
TL;DR: In this article, it has been shown that a base body comprising a bottom surface and side walls defining an inner volume, and a protective coating comprising 80 to 95 % of silicon nitride and 5 to 20 wt. of a low temperature mineral binder, the total oxygen content ranging from 5 to 15 % by weight.
Abstract: The invention relates to a crucible for the crystallization of silicon and to the preparation and application of release coatings for crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots, and more particularly to release coatings for crucibles used in the solidification of polycrystalline silicon. The objective of the inventor was to provide a crucible comprising a silicon nitride coating which is faster and cheaper to produce and which is stronger with an improved adherence to the walls. It has now been found that these problems can be solved with a crucible for the crystallization of silicon comprising a) a base body comprising a bottom surface and side walls defining an inner volume; b) a protective coating comprises 80 to 95 wt. % of silicon nitride and 5 to 20 wt. of a low temperature mineral binder, the total oxygen content ranging from 5 to 15 % by weight.

45 citations

Patent
George Miles Jenkins1
11 Jan 1982
TL;DR: In this article, a form of boat for holding wafers and a manifold structure for feeding gases to the boats was proposed. But the boat was not suitable for the production of polycrystalline silicon coatings.
Abstract: In the production of coatings on semiconductor wafers, fragile equipment is used and also difficulties in obtaining uniform coatings arise. The invention provides a form of boat for holding wafers and a manifold structure for feeding gases to the boats, and wafers which are less fragile cheaper and easier to manufacture and give more uniform coatings. The boats are relatively short, of semi-cylindrical form with slots through which gas can flow, and with rails for positioning and holding wafers at correct heights. The manifolds have apertures which are spaced at varying distances along the manifold as compared to the conventional longitudinal slot. The invention is particularly applicable to producing oxide coatings and polycrystalline silicon coatings on silicon wafers.

45 citations

Journal ArticleDOI
TL;DR: In this article, the conduction and breakdown properties of thermally grown SiO 2 films on amorphous-deposited n+polycrystalline silicon (polysilicon) are evaluated using ramped currentvoltage (I-V ) measurements.
Abstract: The conduction and breakdown properties of thermally grown SiO 2 films on amorphous-deposited n+polycrystalline silicon (polysilicon) are evaluated using ramped current-voltage ( I-V ) measurements. It is shown that the inferior insulating properties of oxides on polysilicon (polyoxides), when compared to SiO 2 on bulk silicon, can be directly attributed to oxidation-induced interface roughness leading to localized enhancement of the oxide electric field. For example, 16.7-nm-thick polyoxides approach bulk SiO 2 properties since a breakdown field E BD of approximately 9.5 MV . cm-1and an effective barrier height for Fowler-Nordheim tunneling, φ Beff as high as 2.78 eV were measured. Both of these parameters are progressively degraded by increasing polyoxide thickness D OX such that for 165-nm-thick polyoxides E_{BD} \simeq 2.5 MV . cm-1and φ Beff is reduced to as low as 0.83 eV. The measured I-V curves are found to become more polarity dependent with increasing D OX due to a comparatively higher degree of oxidation-induced surface roughening at the lower interface, which renders it more "conductive," with regard to Fowler-Nordheim electron injection, than the upper oxide-polysilicon interface. Certain specific device applications require a relatively "conductive" polyoxide capable of carrying high current densities before failure. Consequently, a polysilicon texturing procedure was developed that has the effect of decreasing φ Beff , increasing breakdown current J BD , and eliminating the polarity dependence of I-V curves for any subsequently formed thin polyoxide. The particular process entails growing a predetermined thickness of "texturing" oxide D teox , and removal prior to formation of the device polyoxide of approximately 25-nm thickness. As D teox is increased from zero to 103 nm, the resultant J BD is found to increase by more than an order of magnitude for both polarities of bias. The corresponding decrease in φ Beff is from 1.7 and 2.4 eV for positive and negative gate bias, respectively, to a polarity-independent value of approximately 1.3 eV.

45 citations

Journal ArticleDOI
TL;DR: In this article, the diffusion of boron from an ion implanted polycrystalline silicon source through 12.5 nm oxides was measured as a function of annealing ambience and doping concentrations of phosphorus or arsenic in the polycrystaline silicon.
Abstract: Diffusion of boron from ion implanted polycrystalline silicon source through 12.5 nm oxides was measured as a function of annealing ambience and doping concentrations of phosphorus or arsenic in the polycrystalline silicon. For comparison, boron ion implanted into 500 nm oxides was also investigated. In both cases, annealing in forming gas (90% N2, 10% H2) increases the diffusion rate of boron over that in nitrogen and the rate increase is the result of a large increase in the pre‐exponential term. Diffusion of ion implanted boron in oxides is much slower than that from an ion implanted polycrystalline silicon source. The lowering of the rate is the result of the five orders of magnitude decrease in the pre‐exponential term, even though concurrently there is also a decrease in the activation energy. Co‐doping of polycrystalline silicon with either phosphorus or arsenic lowers the pre‐exponential term by approximately 10%. Therefore, we conclude that boron diffusion through oxides is entropy dominated.

45 citations

Journal ArticleDOI
TL;DR: In this paper, the conductivity, electron mobility, and carrier concentration of heavily doped polycrystalline Si thin films were simultaneously determined from their optical transmission spectra alone.
Abstract: Optical absorption of phosphorus‐doped polycrystalline Si films observed at photon energies below the energy gap has been interpreted in terms of free‐carrier absorption, which obeys the Drude theory. As a result, we can simultaneously determine conductivity, electron mobility, and carrier concentration of heavily doped polycrystalline Si films from their optical transmission spectra alone. The new technique offers a contactless measurement of electrical properties for heavily doped polycrystalline Si thin films.

45 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202343
2022130
2021122
2020313
2019498
2018534