Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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TL;DR: In this paper, the results of an investigation of poly-Si and polySiGe films on glass, formed by aluminum induced crystallization (AIC), were presented, which is based on the isothermal annealing at temperatures between 500 and 540 °C of co-sputtered Si+Al, Si+Ge or sputtered a-Si films.
43 citations
TL;DR: In this paper, annealing of heavily-boron-doped polycrystalline Si films at 600°C on thermally grown SiO2 by the thermal decomposition of SiH4-BCl3-H2 mixture was systematically examined.
Abstract: Heavily-boron-doped polycrystalline Si films were deposited at 600°C on thermally grown SiO2 by the thermal decomposition of SiH4-BCl3-H2 mixture. Resistivity changes with isochronal or sequential annealing were systematically examined. Temperature dependence of equilibrium saturation carrier concentration was determined at 800 ∼ 1100°C. Since as-deposited polycrystalline Si is in the super-saturated state, carrier concentration decreases from the super-saturated to equilibrium saturation value by annealings over 700°C for poly Si doped with over 2 × 1020 cm−3 resulting in anomalous resistivity change. Carrier concentration changes reversibly between saturation values with sequential annealing and is determined by the last annealing temperature when the annealing time is long enough. Mobility increases with annealing temperature, however, less increase is found for heavily doped poly Si, which is attributed to the suppression of grain growth caused by electrically inactive Si-B compounds.
43 citations
TL;DR: In this article, the authors used on-chip polycrystalline silicon side-wall friction MEMS specimens to study active mechanisms during sliding wear in ambient air, and found that small amorphous debris particles (∼50-100 nm) are removed by fracture through the silicon grains and are oxidized during this process.
43 citations
Patent•
30 Oct 1998TL;DR: The excimer laser annealing is carried out in a predominantly air ambient environment at atmospheric pressure and room temperature as discussed by the authors, where the ambient air immediately surrounding the target region on the surface of the silicon film is filled with inert gas.
Abstract: The invention provides a method of making silicon-on-glass substrates used in the manufacture of flat panel displays. A layer of amorphous silicon film is deposited on a glass substrate. The amorphous silicon is annealed by excimer laser annealing, transforming the amorphous silicon into polycrystalline silicon. The excimer laser annealing is carried out in a predominantly air ambient environment at atmospheric pressure and room temperature. The process requires no environmental chamber to house the substrate during excimer laser annealing. The process displaces the ambient air immediately surrounding the target region on the surface of the silicon film, where the laser beam strikes the silicon film, with inert gas. As a result, the ambient environment at the point of annealing on the substrate is depleted of oxygen and the oxygen content of the resultant polycrystalline silicon layer is kept below a predetermined level. The process yields polycrystalline silicon on the flat panel display substrates which have fewer defects and improved crystallization, compared with polycrystalline silicon formed by ELA in air.
43 citations
Patent•
03 Aug 1973TL;DR: In this paper, a freon gas plasma is used for etching so that the two types of silicon compound membranes are continuously etched in a sloped form without any undercutting, as occurs in conventional chemical solution etching.
Abstract: A semiconductor is prepared by continuously etching at least two types of silicon compound membranes such as silicon dioxide (SiO2), silicon nitride (Si3N4) or a polycrystalline silicon membrane which are formed on a silicon substrate. A freon gas plasma is used for etching so that the two types of silicon compound membranes are continuously etched in a sloped form without any undercutting, as occurs in conventional chemical solution etching.
43 citations