Polycrystalline silicon

About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.

Method of making silicon diaphragm pressure sensor

Abstract: A method of making a silicon diaphragm pressure sensor Includes forming an oxide film (10) on one surface of a monocrystalline silicon substrate (9). A polycrystalline silicon layer (11) is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm (12) of the pressure sensor.

Method of manufacturing semiconductor device using chemical-mechanical polishing

Abstract: A method of manufacturing a semiconductor device in which a portion of a monocrystalline silicon layer protruded from a surface of an insulating member is polished up to the surface by a chemical-mechanical polishing is disclosed. A polycrystalline silicon layer and a leveling material are formed in sequence on the protruded portion of the monocrystalline silicon layer and on an exposed part of the surface of the insulating member, and a reactive ion etching and the chemical-mechanical polishing are carried out.

Measurements of potential barrier height of grain boundaries in polycrystalline silicon by Kelvin probe force microscopy

Abstract: In recent years, the importance of polycrystalline silicon has been recognized in electronic device technology, although grain boundaries present in the material often exert a detrimental influence on the electrical properties because of the potential barriers associated with them. However, it is not true that all grain boundaries have similar properties, since they have their own character depending on the orientation relationship between two adjoining grains. We report here the first determination of the potential barrier height for well-characterized grain boundaries in polycrystalline silicon, using Kelvin probe force microscopy. The observed barrier height of the grain boundaries was found to vary in the range 10 to 100 meV depending on the grain boundary character. The most important finding is that the potential barrier height is approximately twice as high at random boundaries as at low-energy coincidence boundaries.

Polycrystalline silicon as a strain gauge material

Abstract: A theoretical model for piezoresistance in both n- and p-type polycrystalline silicon is described. This model considers the contribution to piezoresistance from the grain and the Schottky-type barrier regions around the grain boundaries. Comparison between theory and experiment shows reasonable agreement for both longitudinal and transverse strain measurements. The difference in magnitude between longitudinal and transverse gauge factors depends on texture and is found to be explained by the anisotropy of piezoresistance in silicon. Experimental results for the temperature coefficients of resistance and gauge factor in conjunction with the model for piezoresistance may be used to optimise sensor characteristics within the confines of available processes.