Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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Patent•
12 May 1981
TL;DR: In this article, a polycrystalline silicon layer is formed to cover a contact hole which exposes a predetermined portion of a conductive region, that is, a doped or semiconductor region or a wiring layer formed in contact with a semiconductor body.
Abstract: A method for manufacturing a semiconductor device includes a step, after forming a polycrystalline silicon layer, of doping oxygen and/or nitrogen by ion implantation in a predetermined portion of the polycrystalline silicon layer and converting the predetermined portion into a resistive element. The polycrystalline silicon layer is formed to cover a contact hole which exposes a predetermined portion of a conductive region, that is, a doped or semiconductor region or a wiring layer formed in contact with a semiconductor body. Within this contact hole and within the region of the polycrystalline silicon layer which is in contact with the doped region or the wiring layer, the polycrystalline silicon layer is converted into the resistive element by ion implantation.
141 citations
TL;DR: In this paper, the authors achieved significant photocurrent enhancement for evaporated solid-phase-crystallized polycrystalline silicon thin-film solar cells on glass, due to light trapping provided by Ag nanoparticles located on the rear silicon surface of the cells.
Abstract: Significant photocurrent enhancement has been achieved for evaporated solid-phase-crystallized polycrystalline silicon thin-film solar cells on glass, due to light trapping provided by Ag nanoparticles located on the rear silicon surface of the cells. This configuration takes advantage of the high scattering cross-section and coupling efficiency of rear-located particles formed directly on the optically dense silicon layer. We report short-circuit current enhancement of 29% due to Ag nanoparticles, increasing to 38% when combined with a detached back surface reflector. Compared to conventional light trapping schemes for these cells, this method achieves 1/3 higher short-circuit current.
140 citations
TL;DR: In this paper, the authors use molecular dynamics simulation to study the mechanisms of plasticity during cutting of monocrystalline and polycrystalline silicon, showing that brittle cracking typically inclined at an angle of 45°-55° to the cut surface leads to the formation of periodic arrays of nanogrooves in monocrystine silicon.
139 citations
TL;DR: In this article, the size of the microcrystals in as-deposited films was dependent both on the deposition temperature and on the oxygen concentration, and the lattice constant was directly related to their size.
Abstract: Thermally deposited silicon films doped with oxygen atoms and used as passivation films on silicon devices have been studied with transmission electron microscopy, x‐ray diffraction, and ESCA. The films contain at least two phases, silicon microcrystals and silicon oxide. The size of the microcrystals in as‐deposited films was dependent both on the deposition temperature and on the oxygen concentration. Heat treatment caused crystal growth which depended mainly on the annealing temperature and weakly on the annealing time. The lattice constant of the microcrystals was directly related to their size. The silicon oxide phase in as‐deposited films was found to be SiO1.4. The results suggest ’’mosaic’’ model of the films which are amorphous when the diameter of the silicon microcrystals was less than 10 A.
139 citations
TL;DR: Chlorine atom recombination coefficient (γCl) measurements for a variety of surfaces and at a range of surface temperatures were reported in this paper, where the incident and reflected beam compositions calculated using a modulated beam mass spectrometer were used to infer the recombination coefficients.
Abstract: Chlorine atom recombination coefficient (γCl) measurements are reported for a variety of surfaces and at a range of surface temperatures. The surfaces include crystalline silicon, quartz, anodized aluminum, tungsten, stainless steel, polycrystalline silicon, and photoresist. Surface temperatures ranged from about −90 °C up to 85 °C. Measurements were made in a vacuum chamber with chlorine atoms and molecules effusing from an external discharge source as a molecular beam and impacting a selected surface. The incident and reflected beam compositions calculated using a modulated beam mass spectrometer were used to infer the recombination coefficient. At room temperature, the values of γCl ranged from below the detection sensitivity (about 0.01) for crystalline silicon to ∼0.85 for stainless steel. Other surfaces displayed intermediate values between these extremes. For example, γCl for polycrystalline silicon is about 0.2–0.3 at room temperature. All surfaces, except stainless steel, displayed increasing val...
138 citations