Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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TL;DR: In this article, a thin film hetero-emitter solar cells with large-grained poly-silicon absorbers of around 10µm thickness have been prepared on glass.
Abstract: Thin film hetero-emitter solar cells with large-grained poly-silicon absorbers of around 10 µm thickness have been prepared on glass. The basis of the cell concept is electron-beam-crystallization of an amorphous or nanocrystalline silicon layer deposited onto a SiC:B layer. The SiC:B layer covers a commercially well available glass substrate, serving as diffusion barrier, contact layer and dopand source. For silicon absorber deposition a low pressure chemical vapour deposition was used. The successively applied e-beam crystallization process creates poly-silicon layers with grain sizes up to 1 × 10 mm2 with low defect densities. The high electronic quality of the absorber is reflected in open circuit voltages as high as 545 mV, which are realized making use of the well-developed a-Si:H hetero-emitter technology. Copyright © 2011 John Wiley & Sons, Ltd.
102 citations
Patent•
11 Feb 2004TL;DR: In this article, a method for forming a conductive wire of a semiconductor device using a damascene process is described. But the method is not suitable for the case of high power semiconductors, since the selectivity between a polycrystalline silicon layer and a lower film is approximately 5 to 500:1.
Abstract: A method is provided for forming a conductive wire of a semiconductor device using, for example, a damascene process. A conductive wire, such as a metal wire, is formed, based on a notching phenomenon which occurs when the etching selectivity between a polycrystalline silicon layer and a lower film is approximately 5 to 500:1.
102 citations
TL;DR: In this article, the boron stopping process in polycrystalline silicon and amorphous silicon was compared with a secondary ion mass spectrometer (SISM) and the moments of the first four moments were determined by curve fitting of Pearson distributions to experimental distributions.
Abstract: Boron was implanted in amorphous silicon at energies in the range 30–200 keV and in polycrystalline silicon at energies in the range 70–800 keV. The boron distributions were measured with secondary ion mass spectrometry. By comparing the boron distributions in amorphous silicon and in polycrystalline silicon it was found that the used polycrystalline silicon behaves similarly to amorphous silicon for the boron stopping process. It was found that with the first four moments of the experimental distributions, an analytic description of the experimental distributions can be given by distributions of the Pearson system. The moments are determined by curve fitting of Pearson distributions to experimental distributions. In this way a systematic extrapolation of the low energy distributions outside the surface is automatically obtained. The moments are compared with the moments calculated by Winterbon and others. A satisfactory correspondence between the experimental and theoretical average ranges and s...
102 citations
TL;DR: In this paper, the cylindrical electrodes of the earlier papers are replaced by a combination of wall electrodes, in which a trench, rather than a hole, is filled with doped polycrystalline silicon.
Abstract: Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have been successfully fabricated. The electrode spacing can be less than the substrate thickness, allowing short collection paths, low depletion voltages, and large current signals from rapid charge collection. This paper gives results when the cylindrical electrodes of the earlier papers are replaced by a combination of cylindrical and wall electrodes-ones in which a trench, rather than a hole, is filled with doped polycrystalline silicon. The detection efficiency remains high to within a few micrometers of these wall electrodes, and is an indication that similar high efficiencies should be achievable near the physical edges of the proposed active-edge sensors.
102 citations
TL;DR: The use of femtosecond electron diffraction to resolve the dynamics of electron-phonon relaxation in silicon finds that the loss of intensity in the diffracted orders is accounted for by the Debye-Waller effect on a time scale indicative of a thermally driven process as opposed to an electronically driven one.
Abstract: We report on the use of femtosecond electron diffraction to resolve the dynamics of electron−phonon relaxation in silicon. Nanofabricated free-standing membranes of polycrystalline silicon were exc...
102 citations