Polycrystalline silicon

About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.

Mosfets incorporating nickel germanosilicided gate and methods of their formation

Abstract: A MOSFET gate or a MOSFET source or drain region comprises silicon germanium or polycrystalline silicon germanium. Silicidation with nickel is performed to form a nickel germanosilicide (62, 64) that preferably comprises the monosilicide phase of nickel silicide. The inclusion of germanium in the silicide provides a wider temperature range within which the monosilicide phase may be formed, while essentially preserving the superior sheet resistance exhibited by nickel monosilicide. As a result, the nickel germanosilicide is capable of withstanding greater temperatures during subsequent processing than nickel monosilicide, yet provides approximately the same sheet resistance and other beneficial properties as nickel monosilicide.

Process for the manufacture of a micromechanical element

Abstract: of EP0732635A micro-mechanical component is cut out from a base plate (20) made of a first crystalline material by anisotropic attack. This process takes effect in the direction of the thickness of the plate using a gas excited by plasma, surrounding a mask (30) of the required shape mounted above the plate. This first material may be either mono-crystalline or polycrystalline silicon or its oxide or its nitride. The parts of the component which are intended to come into contact with another component are re-coated by chemical deposition from the vapour phase with a second material. The second material is chosen to offer suitable coefficients of hardness and wear resistance for their task. The second material may, for example, be crystalline carbon in the form of diamond.

Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems

Abstract: Reported nearly a decade ago, cyclic fatigue failure in silicon thin films has remained a mystery. Silicon does not display the room temperature plasticity or extrinsic toughening mechanisms necessary to cause fatigue in either ductile (e.g., metals) or brittle (e.g., ceramics and ordered mintermetallic) materials.

Doped polysilicon silicide semiconductor integrated circuit interconnections

Abstract: An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices. Such interconnecting members are useable to produce field effect transistor type devices.

Integrated micro channels and manifold/plenum using separate silicon or low-cost polycrystalline silicon

Abstract: A method and apparatus for cooling an electronics chip with a cooling plate having integrated micro channels and manifold/plenum made in separate single-crystal silicon or low-cost polycrystalline silicon. Forming the microchannels in the cooling plate is more economical than forming the microchannels directly into the back of the chip being cooled. In some embodiments, the microchannels are high-aspect-ratio grooves formed (e.g., by etching) into a polycrystalline silicon cooling base, which is then attached to a cover (to contain the cooling fluid in the grooves) and to the back of the chip.