Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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IMEC1
TL;DR: In this article, the aluminum induced layer exchange for thin-film solar cells is discussed and different possible solutions to improve the AIC process as well as the resulting solar cells are discussed together with the vision on the direction and future of AIC solar cell research.
77 citations
Patent•
09 Jul 1991TL;DR: In this article, the interlayer insulating film of a nonvolatile memory is selectively removed on the peripheral circuit MOS area, and the polycrystalline silicon film as a lower layer is used as a buffer layer against contamination or damage due to the etching.
Abstract: Before a high permittivity interlayer insulating film of a non-volatile memory having a two-level gate electrode structure, a surface of a substrate in a peripheral circuit MOS area is successively covered with a thermal oxide film and a polycrystalline silicon film. Before the interlayer insulating film is selectively removed on the peripheral circuit MOS area, the surface of the interlayer insulating film of the non-volatile memory is covered with a polycrystalline silicon film. When the interlayer insulating film in the peripheral circuit MOS area is removed, the polycrystalline silicon film as a lower layer in the peripheral circuit area serves as a buffer layer against contamination or damage due to the etching, and the conductive layer on the surface of the interlayer insulating film in the non-volatile memory portion also serves as a buffer layer against the contamination or damage due to the etching.
77 citations
TL;DR: In this article, mechanical grooving using a standard dicing saw in combination with bevelled blades is shown to be a promising texturing technique for polycrystalline silicon surfaces, achieving a minimum total reflectance of R = 56% at 950 nm and an average R = 66% between 500 and 1000 nm.
77 citations
TL;DR: In this paper, grain-boundary hydrogenation has been used to reduce grain−boundary minority carrier recombination and improve diode current-voltage characteristics in p/n photovoltaic cells.
Abstract: Electron‐beam‐induced‐current– and dark‐current–voltage measurements have been made on p/n photovoltaic cells fabricated from polycrystalline silicon. These data have demonstrated that grain‐boundary hydrogenation greatly reduces grain‐boundary minority carrier recombination and improves diode current‐voltage characteristics.
77 citations
TL;DR: In this paper, the same authors reported that chemical vapor deposition (CVD) silicon gates using silane deposited directly onto HfO2 results in electrical properties much worse compared to similar Hf O2 films using platinum metal gates.
Abstract: Polycrystalline-silicon (poly-Si) gate compatibility issues with HfO2 and Al2O3 capped HfO2 gate dielectrics are reported. It can be generally stated that chemical vapor deposition (CVD) silicon gates using silane deposited directly onto HfO2 results in electrical properties much worse compared to similar HfO2 films using platinum metal gates. However, depositing CVD silicon gates directly onto Al2O3 capped HfO2 showed greater than a 104 times reduction in gate leakage compared to the poly-Si/HfO2 and poly-Si/SiO2 controls of similar electrical thickness.
77 citations