Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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TL;DR: Zhu et al. as discussed by the authors showed that by depositing an ultrathin vanadium pentoxide (V2O5) layer on the p-Si anode, the performance of the OLED can be greatly improved.
Abstract: Recently, polycrystalline silicon (p-Si) has been demonstrated to be an efficient anode for organic light-emitting diode (OLED) [X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong, and H. S. Kwok, Appl. Phys. Lett. 87, 083504 (2005)]. In this letter, we show that, by depositing an ultrathin vanadium pentoxide (V2O5) layer on the p-Si anode, the performance of the OLED can be greatly improved. Detailed x-ray photoelectron spectroscopy study shows that strong band bending occurs at the p-Si∕V2O5 interface, leading to much stronger hole injection. This modified p-Si anode can be integrated with the active p-Si layer of thin-film transistors in active-matrix OLED displays.
76 citations
TL;DR: It is demonstrated that the increased surface roughness of the NiOx layer, achieved by controlling the deposition current density, facilitates the hole extraction at the interface between perovskite and NiOx, and thus increases the fill factor and the conversion efficiency.
Abstract: Given that the highest certified conversion efficiency of the organic-inorganic perovskite solar cell (PSC) is already over 22%, which is even higher than that of the polycrystalline silicon solar cell, the significance of new scalable processes that can be utilized for preparing large-area devices and their commercialization is rapidly increasing. From this perspective, the electrodeposition method is one of the mostly suitable processes for preparing large-area devices, because it is an already commercialized process with proven controllability and scalability. Here, we report highly uniform NiOx layer prepared by the electrochemical deposition process as an efficient hole-extraction layer of a p-i-n type planar PSC with a large active area of > 1 cm². We demonstrate that the increased surface roughness of the NiOx layer, achieved by controlling the deposition current density, facilitates the hole extraction at the interface between perovskite and NiOx, and thus increases the fill factor and the conversion efficiency. The electrochemically deposited NiOx layer also exhibits extremely uniform thickness and morphology, leading to the highly efficient and uniform large-area PSCs. As a result, the p-i-n type planar PSC with an area of 1.084 cm² exhibits a stable conversion efficiency of 17.0% (19.2% for 0.1 cm²) without showing hysteresis effect.
76 citations
Patent•
NEC1
TL;DR: In this article, a method of forming a polycrystalline silicon film on a silicon oxide film is described, in which the poly-crystallines silicon film includes crystal grains having a large size, typically 4 micrometers, thereby permitting the resistivity of the poly crystal silicon film to effectively be reduced.
Abstract: Disclosed is a method of forming a polycrystalline silicon film on a silicon oxide film in which the polycrystalline silicon film includes crystal grains having a large size, typically 4 micrometers, thereby permitting the resistivity of the polycrystalline silicon film to effectively be reduced. An amorphous silicon film is deposited on the silicon oxide film by using a chemical vapor deposition in which the flow rate of impurity gas remains at zero during an initial deposition, after which the flow rate is gradually increased from zero to a predetermined value during a final deposition. Thus, the amorphous silicon film comprises double layers, or an impurity unmixed region abutting the silicon oxide film and an impurity mixed region. After that, by a heat treatment, the amorphous silicon film is crystallized to form a polycrystalline silicon film. Concurrently, the impurity diffusion is accomplished.
76 citations
Book•
31 May 1997
TL;DR: In this article, the authors describe the following processes: Crystallization, Impurity Diffusion and Segregation in Polycrystalline Silicon, component evaporation, defect Annealing, and impurity diffusion in III-V Semicondutors.
Abstract: Transient Heating of Semiconductors by Radiation. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals. Crystallization, Impurity Diffusion and Segregation in Polycrystalline Silicon. Component Evaporation, Defect Annealing and Impurity Diffusion in the III-V Semicondutors. Diffusion Synthesis of Silicides in Thin Film Metal-Silicon Structures. Rapid Thermal Oxidation and Nitridation. Rapid Thermal Chemical Vapor Deposition. Indexes.
75 citations
Patent•
11 Jun 2001
TL;DR: In this article, a TFT is formed on an insulating board and the channel region is made of polycrystalline silicon, and the off-leakage of the TFT can be suppressed to be very small.
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device, having a channel region made of a polycrystalline semiconductor having a small off-leakage and a small unevenness of the off-leakage at each element. SOLUTION: A TFT is formed on an insulating board 1. The channel region of the TFT is made of a polycrystalline silicon. A thickness of this channel region is 5 nm or less, and the width of the channel region is 0.3 μm or less. As a result, off-leakage of the TFT can be suppressed to be very small, and the unevenness of the TFT can be suppressed.
75 citations