Polycrystalline silicon

About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.

High-Density Through Silicon Vias for 3-D LSIs : Silicon stacked chips that perform highly-parallel data transfer have been successfully fabricated for image processing, artificial retinas, and for microprocessor and memory testing

Abstract: High density through silicon via (TSV) is a key in fabricating three-dimensional (3-D) large-scale integration (LSI). We have developed polycrystalline silicon (poly-Si) TSV technology and tungsten (W)/poly-Si TSV technology for 3-D integration. In the poly-Si TSV formation, low-pressure chem- ical vapor deposition poly-Si heavily doped with phosphorus was conformally deposited into the narrow and deep trench formed in a Si substrate after the surface of Si trench was thermally oxidized. In the W/poly-Si TSV formation, tungsten was deposited into the Si trench by atomic layer deposition method after the poly-Si deposition, where poly-Si was used as a liner layer for W deposition. The 3-D microprocessor test chip, 3-D memory test chip, 3-D image sensor chip, and 3-D artificial retina chip were successfully fabricated by using poly-Si TSV.

Semiconductors for Solar Cells

Abstract: Physical principles of photovoltaic energy conversion technology of solar cell devices fundamental material parameters structural and electrical properties of lattice defects single crystal and polycrystalline silicon single crystal and epitaxial compound semiconductors thin-film compound semiconductors amorphous thin-film semiconductors.

Zero‐bias resistance of grain boundaries in neutron‐transmutation‐doped polycrystalline silicon

Abstract: We have characterized the electrical transport properties of neutron‐transmutation‐doped polycrystalline silicon. Zero‐bias measurements of resistance have been made as a function of temperature on both bulk specimens and individual grain boundaries in this material. Below a doping level of ∼2×1015 phosphorus/cm3, the bulk resistance has a nearly Arrhenius behavior with an activation energy of ∼0.55 eV; above this donor concentration the resistivity is markedly curved on an Arrhenius plot with values of slope which decrease with decreasing temperature. Potential probe measurements show that a large spread in grain‐boundary impedances exist in these higher‐doped specimens. We compare our data to theoretical expressions for current flow across grain‐boundary potential barriers and good agreement is observed; these comparisons indicate that the largest grain‐boundary state densities observed in our samples consist of ∼6×1011 available single‐electron‐states/cm2 located within ∼0.2 eV from the center of the f...

Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates

Abstract: A fabrication process polycrystalline silicon thin film transistors commences with the deposition of an ultra-thin nucleating-site forming layer onto the surface of an insulating substrate (e.g., 7059 glass). Next, an amorphous silicon film is deposited thereover and the combined films are annealed at temperatures that do not exceed 600° C. By patterning the deposition of the nucleating site forming material on the glass substrate, the subsequently deposited amorphous film can be selectively crystallized only in areas in contact with the nucleating-site forming material.

Theory of the electrical and photovoltaic properties of polycrystalline silicon

Abstract: Grain boundary states play a dominant role in determining the electrical and photovoltaic properties of polycrystalline silicon by acting as traps and recombination centers. The recombination loss at grain boundaries is the predominant loss mechanism in polycrystalline solar cells. Cell parameters are calculated based on a transformation of grain boundary recombination centers to a uniform distribution of such states throughout the grain. Effective carrier lifetime is expressed in terms of grain size, allowing calculation of short‐circuit current, open‐circuit voltage, and fill factor. Excellent agreement is observed between theory and experiment for almost all device parameters. It is indicated that one could fabricate 10% efficiency polycrystalline solar cells from 20‐μm‐thick material if the grain size exceeds 500 μm.