Polycrystalline silicon

About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.

Thin film microcalorimeter for heat capacity measurements from 1.5 to 800 K

Abstract: A new microcalorimeter for measuring heat capacity of thin films in the range 1.5–800 K is described. Semiconductor processing techniques are used to create a device with an amorphous silicon nitride membrane as the sample substrate, a Pt thin film resistor for temperatures greater than 40 K, and either a thin film amorphous Nb–Si or a novel boron‐doped polycrystalline silicon thermometer for lower temperatures. The addenda of the device, including substrate, is 4×10−6 J/K at room temperature and 2×10−9 J/K at 4.3 K, approximately two orders of magnitude less than any existing calorimeter used for measuring thin films. The device is capable of measuring the heat capacity of thin film samples as small as a few micrograms.

Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

Abstract: An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film ( 7 ), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate ( 1 ), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film ( 7 ) on the substrate ( 1 ), a method comprises forming a low-crystallization semiconductor thin-film ( 7 A) on the substrate ( 1 ), and subsequently heating and cooling this low-crystallization semiconductor thin-film ( 7 A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film ( 7 ) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.

Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry

Abstract: The optical functions of several forms of thin‐film silicon (amorphous Si, fine‐grain polycrystalline Si, and large‐grain polycrystalline Si) grown on oxidized Si have been determined using 2‐channel spectroscopic polarization modulation ellipsometry from 240 to 840 nm (∼1.5–5.2 eV). It is shown that the standard technique for simulating the optical functions of polycrystalline silicon (an effective medium consisting of crystalline Si, amorphous Si, and voids) does not fit the ellipsometry data.

Stacked-type semiconductor device

Abstract: In a method of manufacturing a stacked-type semiconductor device, firstly, a first semiconductor substrate having a first device formed thereon is covered with an interlayer insulating layer and a planarized polycrystalline silicon layer is formed on the interlayer insulating layer. The first semiconductor substrate and a second semiconductor substrate are joined together by putting the surface of the polycrystalline silicon layer in close contact with the surface of a refractory metal layer formed on the second semiconductor substrate, applying thermal treatment at 700° C. or below and changing the refractory metal layer to silicide.