Topic
Polycrystalline silicon
About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.
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TL;DR: In this paper, the origins of leakage current in polycrystalline silicon (poly-Si) thin film transistors were studied as a function of drain voltage, and three kinds of leakage currents were introduced to explain the experimental results.
Abstract: We have studied the origins of the leakage current in polycrystalline silicon (poly-Si) thin film transistors. Temperature dependent transfer characteristics were measured as a function of drain voltage. Three kinds of leakage current were introduced to explain the experimental results. The leakage current may arise from the generation current at very low drain voltage, and may result in the same activation energy between leakage current and conductivity of undoped poly-Si. The leakage current may be due to the thermionic field emission via grain boundary defects in the intermediate drain voltage region. At high drain voltage and high negative gate voltage, the leakage current may result from the field enhanced tunneling of electrons in the valence band to the conduction band via grain boundary traps.
69 citations
Patent•
15 Sep 1995TL;DR: In this paper, a manufacturing method and device for a polycrystalline silicon, the manufacturing method forms amorphous silicon on the substrate, and an adiabatic layer between substrate and amorphus if needed.
Abstract: In a manufacturing method and device for a polycrystalline silicon, the manufacturing method forms amorphous silicon on the substrate, and an adiabatic layer between substrate and amorphous silicon if needed. The amorphous silicon is preliminarily heated and melted, and is evenly supplied with heat when the amorphous silicon is re-crystallized, to thereby slow down the re-crystallization. Also, a manufacturing device has first and second light sources for supplying an optical energy to a-Si formed on substrate. A uniformed and large sized grain can be formed, and specifically, cost reduction is possible since the general glass substrate can be used.
69 citations
TL;DR: In this article, thin film solar cells based in Cu(In,Ga)Se-2 (CIGS) were shown to be among the most efficient polycrystalline solar cells.
Abstract: Thin film solar cells based in Cu(In,Ga)Se-2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, ...
69 citations
TL;DR: In this article, the authors present the vision of back-end deposited silicon photonics (BDSP) and review works that have been done in this field, including excimer-laser-annealed polycrystalline silicon, low-loss plasma-enhanced chemical vapor deposition silicon nitride waveguide, modulator, detector, electrical interface, and benefits of the platform.
Abstract: We present the vision of back-end deposited silicon photonics (BDSP) and review works that have been done in this field. Individual aspects of BDSP platform including excimer-laser-annealed polycrystalline silicon, low-loss plasma-enhanced chemical vapor deposition silicon nitride waveguide, modulator, detector, electrical interface, back-end CMOS compatibility, and benefits of the platform are discussed in detail.
69 citations