Topic
Potential well
About: Potential well is a research topic. Over the lifetime, 1430 publications have been published within this topic receiving 30812 citations.
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TL;DR: In this paper, the properties of the quasi-type-II structure in a single quantum well nanowire have been investigated and the authors showed that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in the nanowires.
Abstract: The GaAsSb-based quantum well plays a very important role in optoelectronic devices due to its excellent wavelength tunability. When the dimension reduces, the quantum confinement effect will take place and the quantum well in nanowires will show many interesting characteristics. GaAsSb-based quantum-well nanowires are of contemporary interest. However, the properties of the quasi-type-II structure in a single quantum well nanowire have been rarely investigated. Here, we grow GaAs/GaAs0.92Sb0.08/GaAs coaxial single quantum-well nanowires and discussed their power-dependent and temperature-dependent photoluminescence. We find that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in our nanowires. When electrons obtain enough thermal energy through collisions or surrounding environment, they will overcome the barrier and diffuse to the GaAs conduction band, which contributes to the type-II like recombination. These results show the optical property of the quasi-type-II quantum well in nanowires, which can pave the way toward future nanoscale quantum well devices.
115 citations
TL;DR: In this paper, the broken translation symmetry due to structural defects may play a more important role than the quantum confinement effect in the Raman features of optical phonons in polar semiconductor quantum wires such as SiC nanorods.
114 citations
TL;DR: Aqueous dispersion of 4-8-nm size stable ZnO quantum dots exhibiting luminescence in the visible region have been synthesized by a simple solution growth technique at room temperature as mentioned in this paper.
113 citations
TL;DR: In this article, the quantum-confinement effects in Ge nanocrystals formed with ultrahigh density (>1012cm−2) by Ge deposition on ultrathin Si oxide films were revealed.
Abstract: Scanning tunneling spectroscopic studies revealed the quantum-confinement effects in Ge nanocrystals formed with ultrahigh density (>1012cm−2) by Ge deposition on ultrathin Si oxide films. With decreasing crystal size, the conduction band maximum upshifted and the valence band minimum downshifted. The energy shift in both cases was about 0.7 eV with the size change from 7 to 2 nm. This shows that the energy band gaps of Ge nanocrystals increased to ∼1.4eV with decreasing size. This size dependence can be explained by the quantum-confinement effect in Ge nanocrystals.
113 citations
TL;DR: In this article, the authors predict an efficient electronic energy transfer from an excited semiconductor quantum well to optically active organic molecules of the nearby medium (substrate and/or overlayer).
Abstract: We predict an efficient electronic energy transfer from an excited semiconductor quantum well to optically active organic molecules of the nearby medium (substrate and/or overlayer). The energy transfer mechanism is of the Forster type and, at semiconductor-organic distances of about 50 A, can easily be as fast as 10-100 ps, which is about an order of magnitude shorter than the effective exciton lifetime in an isolated quantum well. In such conditions, the Wannier-Mott exciton luminescence is quenched and the organic luminescence is efficiently turned on. We consider both free as well as localized quantum well excitons discussing the dependence of the energy transfer rate on temperature and localization length. A similar mechanism for the non-radiative energy transfer to the organic overlayer molecules from unbound electron-hole pairs excited in the 2D continuum is shown to be much less competitive with respect to other relaxation channels inside the inorganic quantum well (in particular, 2D exciton formation).
113 citations