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Potential well

About: Potential well is a research topic. Over the lifetime, 1430 publications have been published within this topic receiving 30812 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, a high density of nanocrystals embedded in an amorphous matrix despite the process performed at a low temperature was found in ZnO thin films synthesized using a sol-gel method.

12 citations

Journal ArticleDOI
01 Nov 2015-Vacuum
TL;DR: In this paper, the mechanisms of photoluminescence (PL) emission of samples annealed at different temperatures were investigated and it was shown that the PL emission of the as-deposited samples shows little change while that of the annealing samples at 1100°C exhibits an obvious redshift with the increase of excitation wavelength from 325-nm to 532-nm.

12 citations

Journal ArticleDOI
TL;DR: The Cd 0.3 Zn 0.7 S-ZnS strained-layer superlattices have been fabricated on (100)GaAs substrates by a low-pressure MOCVD method as discussed by the authors.
Abstract: The Cd 0.3 Zn 0.7 S-ZnS strained-layer superlattices has for the first time been fabricated on (100)GaAs substrates by a low-pressure MOCVD method. Exciton luminescence properties were investigated by the photoluminescence spectroscopies which show that the quantum confinement effect of excitons occurs in the CdZnS alloy layer. Temperature dependence of the exciton properties reveals a dominant scattering process which originates from exciton-phonon interaction(Γ 10 =68meV). Nevertheless, the large exciton binding energy of about 166meV makes it possible to produce the exciton peak at room temperature. The effect of external electric field on the exciton intensity and its peak position is found and is tentatively interpreted in terms of a quantum confined Stark effect.

12 citations

Journal ArticleDOI
TL;DR: In this paper, size-uniform Si nanodots (NDs) are synthesized on an AlN buffer layer at low Si(111) substrate temperatures using inductively coupled plasma-assisted magnetron sputtering deposition.
Abstract: Size-uniform Si nanodots (NDs) are synthesized on an AlN buffer layer at low Si(111) substrate temperatures using inductively coupled plasma-assisted magnetron sputtering deposition. High-resolution electron microscopy reveals that the sizes of the Si NDs range from 9 to 30 nm. Room-temperature photoluminescence (PL) spectra indicate that the energy peak shifts from 738 to 778 nm with increasing the ND size. In this system, the quantum confinement effect is fairly strong even for relatively large (up to 25 nm in diameter) NDs, which is promising for the development of the next-generation all-Si tandem solar cells capable of effectively capturing sunlight photons with the energies between 1.7 (infrared: large NDs) and 3.4 eV (ultraviolet: small NDs). The strength of the resulting electron confinement in the Si/AlN ND system is evaluated and justified by analyzing the measured PL spectra using the ionization energy theory approximation.

12 citations

Journal ArticleDOI
TL;DR: Photoluminescence study has illustrated that the Si band-to-band gap increases from 1.1 eV for bulk Si to 1.56 ev for the as-grown SiNWs due to quantum confinement effect, and nonlinear scattering is believed to make a dominant contribution to the nonlinear response of Si NWs.
Abstract: Si nanowires (SiNWs) have been produced by thermal vaporization on Si(111) substrate without catalysts added. The grown SiNWs have been characterized by Raman scattering, SEM, XRD, and electron diffraction and shown to be highly crystalline with only little impurities such as amorphous Si and silicon oxides. Photoluminescence (PL) study has illustrated that the Si band-to-band gap increases from 1.1 eV for bulk Si to 1.56 eV for the as-grown SiNWs due to quantum confinement effect. A strong PL peak at 521 nm (2.37 eV) is attributed to the relaxation of the photon-induced self-trapped state in the form of surface Si-Si dimers, which may also play an important role in optical limiting of SiNWs with 532-nm nanosecond laser pulses. With the observation of optical limiting at 1064 nm, nonlinear scattering is believed to make a dominant contribution to the nonlinear response of SiNWs.

12 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20234
202215
202164
202062
201940
201875