Topic
Potential well
About: Potential well is a research topic. Over the lifetime, 1430 publications have been published within this topic receiving 30812 citations.
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TL;DR: In this paper, photo-modulated reflection spectra of GaAs quantum wells where the top barrier is confined by thin Al 0.3 Ga 0.7 As layers are investigated.
10 citations
13 Oct 2013
TL;DR: In this paper, size determination of SnO2 QDs prepared by a soft chemical method using various techniques and their correlation is reported, including direct method like high resolution transmission electron microscopy (HRTEM), and indirect method like X-ray diffraction and ultra violet-visible (UV-Vis) techniques used for size determination.
Abstract: Measuring the size of the quantum dots (QDs) with accuracy is crucial considering its effect on the physical and chemical properties. Size determination of SnO2 QDs prepared by a soft chemical method using various techniques and their correlation is reported here. Direct method like high resolution transmission electron microscopy (HRTEM), and indirect method like X-ray diffraction and ultra violet-visible (UV-Vis) techniques used for size determination and then correlated. Effective crystallite size found from TEM morphological analysis is 2.4 ± 0.1 nm, which matches closely with the crystallite size of 2.3 ± 0.1 nm as calculated using Williamson-Hall plot. Particle size is also calculated from UV-Vis spectroscopy following quantum confinement effect in SnO2. The obtained slopes from the Tauc's plot provide a distri- bution of particle sizes which matches well with the result from TEM analysis.
10 citations
TL;DR: In this article, a simple one pot acidic solution single precursor synthesis method has lead to highly crystalline SnO 2 quantum dots (QD) that self assemble to form mesoscopic spheres.
10 citations
TL;DR: The dielectric response of molecular-beam epitaxially grown single Al0.3Ga0.7As square quantum wells with thicknesses in the range 14-59 A was examined via spectroscopic ellipsometry in the energy range 1.6-5.7 eV.
Abstract: The dielectric response of molecular‐beam epitaxially grown single Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As square quantum wells with thicknesses in the range 14–59 A is examined via spectroscopic ellipsometry in the energy range 1.6–5.7 eV. Shifts in the E1 transitions are observed and found to be consistent with the shifts calculated within a simple square well model with finite barrier height using appropriate L‐point parameters of the bulk materials.
9 citations
TL;DR: In this article, multiple quantum well structures are fabricated using molecular beam epitaxy (MBE) on SOI (Silicon-on-Insulator) substrates in order to eliminate substrate effects, especially on the Seebeck coefficient.
Abstract: In bulk form, Si1-xGe x is a promising thermoelectric material for high temperature applications. In this paper, we report results from an experimental study as well as theoretical modeling of the quantum confinement effect on the enhancement of the thermoelectric figure of merit. Si/Si1-xGe x , multiple quantum well structures are fabricated using molecular beam epitaxy (MBE) on SOI (Silicon-on-Insulator) substrates in order to eliminate substrate effects, especially on the Seebeck coefficient. A method to eliminate the influence of the buffer layer on the thermoelectric characterization is presented. An enhancement of the thermoelectric figure of merit within the quantum well over the bulk value is observed.
9 citations