Potential well

About: Potential well is a research topic. Over the lifetime, 1430 publications have been published within this topic receiving 30812 citations.

An effective quantum potential for particle–particle interactions in three-dimensional semiconductor device simulations

Abstract: The classical Coulomb potential and force can be calculated efficiently using fast multi-pole methods. Effective quantum potentials, however, describe the physics of electron transport in semiconductors more precisely. Such an effective quantum potential was derived previously for the interaction of an electron with a barrier for use in particle-based Monte Carlo semiconductor device simulators. The method is based on a perturbation theory around thermodynamic equilibrium and leads to an effective potential scheme in which the size of the electron depends upon its energy and which is parameter-free. Here we extend the method to electron-electron interactions and show how the effective quantum potential can be evaluated efficiently in the context of many-body problems. Finally several examples illustrate how the momentum of the electrons changes the classical potential.

Hybrid phthalocyanine/lead sulphide nanocomposite for bistable memory switches

Abstract: A simple, one-step method is employed to produce, at room temperature, a single layer of an organic-inorganic nanocomposite containing non-aggregated lead sulphide (PbS) quantum dots (QDs) embedded in a 130 nm thick solution processed film of the organic semiconductor 6PcH2 (metal-free, non-peripherally substituted octahexyl phthalocyanine) on indium tin oxide. The mean size of PbS QDs is found from x-ray diffraction and transmission electron microscopy techniques to be much smaller than the Bohr radius. Further evidence of the quantum confinement effect is provided by a blue shift in the absorption spectrum and the increased band gap of 1.95 eV with respect to bulk PbS. The current–voltage characteristics of the hybrid and pristine 6PcH2 films, both in a sandwich configuration with the aluminium top electrode, exhibit bistable switching type hysteresis. The on-off ratio of the nanocomposite device is at least three orders of magnitude higher than that for 6PcH2 organic films, while both devices operate at a very low bias voltage of 0.5 V. The inclusion of the PbS QDs into the 6PcH2 film enhances the conductivity by nearly two orders of magnitude over that of a comparable pristine 6PcH2 film due to the formation of a charge transfer complex with PbS QDs and 6PcH2 acting as acceptors and donors of electrons, respectively.

Quantum confinement effect in strained-Si 1−x Ge x double-gate tunnel field-effect transistors

Abstract: The energy bandgap is a key factor to determine the tunneling current in tunnel field-effect transistors (TFETs). This paper numerically investigates the effect of quantum confinement in the double-gate TFETs by evaluating the effective energy-band bandgap of the ultra-thin strained-Si1-xGex body. The band-offset caused by the quantum confinement effect is rapidly increased with increasing the Ge mole fraction because the body thickness must be decreased to retain the same compressive strain of Si1-xGex. A medium Ge more fraction of strained-Si1-xGex is favorable to optimize the device performance in the strained-Si1-xGex double-gate TFETs.