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Potential well

About: Potential well is a research topic. Over the lifetime, 1430 publications have been published within this topic receiving 30812 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the variation of the binding energy of an on-axis hydrogenic impurity in a cylindrical semiconductor GaAsalxGa1-xAs quantum well wire (QWW) with temperature was investigated.
Abstract: In this work, we investigate the variation of the binding energy of an on-axis hydrogenic impurity in a cylindrical semiconductor GaAsalxGa1–xAs quantum well wire (QWW) with temperature, by taking into account the temperature dependance of the electron masses and dielectric constants in the quantum well and potential barrier region as well as the temperature dependence of the barrier height. This investigation is important in understanding the role such impurities can play in determining the transport properties of such systems. The results show enhancement of the binding energy as the temperature is decreased, specially for small values of wire radius.

5 citations

Journal ArticleDOI
TL;DR: In this paper, the impact of barrier thickness and the strain effect in band edges of wide band gap II-VI ZnSe/ZnS strained multiple quantum well structures (MQW) were carried out.

5 citations

Proceedings ArticleDOI
23 Apr 2001
TL;DR: In this paper, high quality ZnO/Zn1MgO multi-quantum wells (MQWs) have been prepared on lattice-matched ScAIMgO4 substrates by laser-MBE method.
Abstract: High quality ZnO/Zn1MgO multi-quantum wells (MQWs) have been prepared on lattice-matched ScAIMgO4 substrates by laser-MBE method. Nine pixels of MQWs having different well widths were integrated in the same substrate by means of combinatorial masking techniques, which provided excellent specimens to systematically study the dependence of physical properties of MQWs on well widths. Optically pumped stimulated emission spectra were measured in these ZnO/Zn1MgO multi-quantum wells by using a tunable pulsed dye laser as excitation source. We investigated the pump-intensity dependence of the stimulated emission spectra from 5 to 300 K. At low temperatures, only one peak in the stimulated emission was observed, which could be assigned to the emission induced by exciton-exciton inelastic scattering (P-band). When the temperature increases above 160 K, there appears an additional peak at the lower energy side of the P-band, which was assigned to electronhole plasma emission. However, the emission due to the exciton-exciton scattering still remains up to room temperature. The gain spectrum for a multi-quantum well sample has been obtained by variable stripe method at room temperature. At an excitation intensity of about 2 MW/cm2, the peak gains for the P-band and electron-hole plasma emission are 239 cm1 and 380 cm1, respectively. The exciton binding energy was deduced from the energy difference between the P-band and free exciton band. The exciton binding energies of these samples having different well widths were found to increase with decreasing the well widths due to the quantum confinement effect. This enhancement of exciton binding energy should be favorable for the stability of exciton states at higher temperatures.

5 citations

Patent
31 May 2017
TL;DR: In this paper, a quantum dot solid-state membrane and a preparation method for a QLED device are described. But the method comprises the steps of firstly preparing the quantum dot solvers from quantum dots containing ligands, putting the solvers into an inorganic salt solution for 1s to 10min, and then taking out the quantum solvers and cleaning the solver by using a solvent the same as the inorganic solvers to obtain the QSMs containing different ligands.
Abstract: The invention discloses a quantum dot solid-state membrane and a preparation method thereof and a QLED device. The method comprises the steps of firstly preparing the quantum dot solid-state membrane from quantum dots containing ligands; putting the quantum dot solid-state membrane into an inorganic salt solution for 1s to 10min and then taking out the quantum dot solid-state membrane; cleaning the quantum dot solid-state membrane by using a solvent the same as the inorganic salt solution to obtain the quantum dot solid-state membrane containing different ligands. The quantum dot solid-state membrane is crosslinked by using an inorganic salt, so that the original organic ligands on the surfaces of the quantum dots can be effectively removed and the quantum confinement effect of the quantum dots is not affected; and meanwhile, the prepared quantum dot solid-state membrane is beneficial to recombination luminescence of electrons and holes in the QLED device. In addition, the quantum dot solid-state membrane is simple in operation, easy to repeat and relatively low in implementation cost.

5 citations

Dissertation
01 Jan 2018
TL;DR: In this paper, the transport of thermally and optically excited electrons invarious nanowire structures is studied to extract the electronic properties of nanowires and to investigate the limit of energy conversion in thermoelectricand photovoltaic devices.
Abstract: This thesis explores the transport of thermally and optically excited electrons invarious nanowire structures. On one hand, electrons are thermally excited when thetemperature is nonzero, and the thermal energy help them surmount energy barriersthat are present in the material. On the other hand, when the electron distributionsat different part of the material are out-of-equilibrium due to thermal or opticalexcitations, an electrical current is created, converting the thermal and opticalenergy into electricity. Thus, in this thesis, the transport of thermally and opticallyexcited electrons is studied to extract the electronic properties of nanowireheterostructures and to investigate the limit of energy conversion in thermoelectricand photovoltaic devices.First, the measurement of thermionic emission current, which is the thermallyinduced electron flow over energy barriers, is used to study the electronic propertiesof InAs crystal phase heterostructures. The band offset, polarization charges, andcarrier density differences between the zinc blende and wurtzite crystal phases areinvestigated. In addition, quantum dot states can be formed within a wurtzitesegment or between two closely spaced wurtzite segments in an otherwise zincblende nanowire. The quantum dot formed between two wurtzite segments can befurther split into two parallel coupled quantum dots. Numerical simulations are usedto understand the formation and the interaction between the two quantum dots.Secondly, the thermoelectric response of pure zinc blende InAs nanowires isstudied. At low temperatures, the quantum confinement effect can be observed, andthe electrons exhibit quasi-1D transport. Conductance quantization and Seebeckcoefficient oscillation as a function of gate voltages, characteristic of quasi-1Dsystem, are observed. More importantly, a theoretical limit for the power factor ofnon-ballistic 1D channels is found and tested experimentally.Finally, the transport of optically excited electrons in InAs-InP-InAsheterostructure nanowires is studied. Electron distributions that are out-of- thermal equilibrium with, more specifically hotter than, the lattice and the environment arecreated through optical excitation with photon energies significantly larger than theband gap. An energy barrier formed by the InP segment is used to selectively extracthigh energy electrons and convert their kinetic energy into electrical potential.Nanophotonic effects including optical resonances in nanowires and localizedsurface plasmon resonances in metal nanostructures are used to create a nonuniformhot-electron distribution around the InP barrier. In particular, the hot-electrons canbe generated locally near the controlled position of the plasmonic metalnanostructures, which facilitates an in-depth study of their transport. (Less)

5 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20234
202215
202164
202062
201940
201875