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Potential well
About: Potential well is a research topic. Over the lifetime, 1430 publications have been published within this topic receiving 30812 citations.
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24 Aug 2012
TL;DR: In this article, the phase time of wave reflection from a one-dimensional semi-harmonic well includes a delay term which can be negative according to the incoming energy and the well parameters in a quantum scattering process.
Abstract: The phase time of wave reflection from a one-dimensional semi-harmonic well includes a delay term which can be negative according to the incoming energy and the well parameters in a quantum scattering process. The model is a rectangular well which is embedded in an environment composed by a zero potential energy to its right and a harmonic-like potential to its left.
4 citations
02 May 2000
TL;DR: In this article, the SbSI quantum dot composites are used for electro-optical devices with high dielectric permittivity, high electrooptical coefficient and high photoconductivity.
Abstract: Semiconducting ferro electric antimony sulphoiodide (SbSI) microcrystallite doped organically modified TiO2 thin film and bulk solids are successfully fabricated by the sol- gel process Ferro electric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity SbSI is also an intrinsic semiconductor with a relatively narrow energy gap If the crystal size is near its Bohr radius and the microcrystallites are dispersed in a suitable matrix, a dramatic improvement of the third order non linearity will be achieved due to the quantum confinement effect It is clear that the SbSI quantum dot composites are good candidates for electro-optical devices Glycidoxypropyltrimetroxysilane modified TiO2 is used as the matrix and SbSI is synthesized in situ by using SbI3 SC9NH2)2 and H2S gas The size is controlled by the heat-treatment conditions and is characterized by the XRD and HRTEM measurements The optical absorption spectrum gives evidence of the quantum confinement effect The third order susceptibility of the SbSI quantum dot is measured by the degenerate four wave mixing method© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering Downloading of the abstract is permitted for personal use only
4 citations
TL;DR: In this paper, multiple quantum wells (MQWs) were deposited in radial direction on ZnO nanowires using pulsed-laser deposition, and the QW-related emission was tuned between 2.46 and 3.35 eV.
Abstract: Nonpolar (Zn,Cd)O/(Mg,Zn)O multiple quantum wells (MQWs) were deposited in radial direction on ZnO nanowires using pulsed-laser deposition. The heterostructures with diameters in the micro regime exhibit both excitonic and optical confinement. Making use of the quantum confinement effect, the QW-related emission was tuned between 2.46 and 3.35 eV. Because of the cavity properties of the resonator with hexagonal cross section, hexagonal whispering gallery modes (WGMs) are observed up to energies close to the (Mg,Zn)O bandgap, enabling a spatial and spectral overlap of the MQW luminescence and the WGM. The resonant WGM energies were reproduced by using resonant wave numbers from numerical calculations.
4 citations
TL;DR: In this paper, a resonance inelastic x-ray scattering (RIXS) study of α-Fe2O3 crystalline nanorod bundle arrays at the Fe L-edge is reported.
Abstract: Synchrotron-based spectroscopic investigations of 1D nanomaterials consisting of designed oriented nanorod-arrays of hematite grown by aqueous chemical growth reveal significant differences in the electronic structure and bandgap compared to bulk samples. Resonant inelastic x-ray scattering (RIXS) study of α-Fe2O3 crystalline nanorod bundle arrays at the Fe L-edge is reported. The low energy excitations, namely d-d and charge-transfer excitations, are identified in the region from 1 to 5 eV. The 1-eV and 1.6-eV energy-loss features are weak transitions from multiple excitations. The 2.5-eV excitation which corresponds to the bandgap transition appears significantly larger than the typical 1.9-2.2-eV-bandgap of single-crystal or polycrystalline hematite samples, revealing a one-dimensional (1D) quantum confinement effect in the bundled ultrafine nanorod-arrays. Such conclusion strongly suggest that bandgap and band edge position criteria for direct photo-oxidation of water by solar irradiation without an applied bias are therefore satisfied for such purpose-built nanomaterials. The outcome of such a result is of great importance for the solar production of hydrogen, an environmental friendly energy source carrier for the future. Indeed, the generation of hydrogen by visible light irradiation with an environmental friendly and economical photoactive material would thus advance a step closer to reality.
4 citations
10 Dec 1995
TL;DR: In this paper, p-channel quantum-dot transistors were fabricated in silicon-on-insulator (SOI) and strong oscillations in the drain current as a function of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV.
Abstract: Novel p-channel quantum-dot transistors were fabricated in silicon-on-insulator (SOI). Strong oscillations in the drain current as a function of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV. Measurements show that the average energy level spacing is approximately 33 meV and it is due to both single hole charging effect and quantum confinement effect. A digital inverter using a complementary pair of n and p-channel quantum dot transistors is also proposed.
4 citations