Potential well

About: Potential well is a research topic. Over the lifetime, 1430 publications have been published within this topic receiving 30812 citations.

Quantum-Confined ZnO Nanoshell Photoanodes for Mesoscopic Solar Cells

Abstract: We present a photoanode for dye-sensitized solar cell (DSC) based on ZnO nanoshell deposited by atomic layer deposition at 150 °C on a mesoporous insulating template. An ultrathin layer of ZnO between 3 and 6 nm, which exhibits quantum confinement effect, is found to be sufficient to transport the photogenerated electrons to the external contacts and exhibits near-unity collection efficiency. A 6 nm ZnO nanoshell on a 2.5 μm mesoporous nanoparticle Al2O3 template yields photovoltaic power conversion efficiency (PCE) of 4.2% in liquid DSC. Perovskite absorber (CH3NH3PbI3) based solid state solar cells made with similar ZnO nanostructures lead to a high PCE of 7%.

Raman investigation of silicon nanocrystals: quantum confinement and laser-induced thermal effects

Abstract: We present a detailed experimental and theoretical Raman investigation of quantum confinement and laser-induced local thermal effects on hydrogenated nanocrystalline silicon with different nanocrystal sizes (3.6–6.2 nm). The local temperature was monitored by measuring the Stokes/anti-Stokes peak ratio with the laser power density range from ~120 to 960 kW/cm2. In combination with the three-dimensional phonon confinement model and the anharmonic effect, which incorporates the three-phonon and four-phonon decay processes, we revealed an asymmetrical decay process with wavenumbers ~170 and 350 cm–1, an increasing anharmonic effect with nanocrystal sizes, and a shortening lifetime with enhanced temperature and decreasing nanocrystal dimension. Furthermore, we demonstrated experimentally that for Si nanocrystals smaller than 6 nm, the quantum confinement effect is dominant for the peak shift and line broadening. Copyright © 2011 John Wiley & Sons, Ltd.

Photoluminescence and resonant Raman scattering from ZnO-opal structures

Abstract: We study photoluminescence(PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission spectrum of thick ZnO layers grown on the surface of bulk opals exhibits narrow PL bands associated with the recombination of bound and free-excitons. The free-exciton lines are discussed taking into account the polariton phenomena. The width of the excitonic lines (2–3 meV) along with their energy position is indicative of high quality and strain-free state of the layer. The emission from ZnO crystallites embedded into bulk opal is dominated by near band gap luminescence, a weak quantum confinement effect being observed for crystallites with sizes around 50 nm. Thin ZnOfilmsgrown on single-layer opals exhibit enhanced resonant Raman scattering,phonon confinement effects, and surface-related modes. Strong exciton-LO phonon and exciton-Frohlich mode coupling in ZnO nanostructures is deduced from the analysis of multiphonon excitonic resonant Raman scattering.

Atomically thin cesium lead bromide perovskite quantum wires with high luminescence.

Abstract: We report a room-temperature colloidal synthesis of few-unit-cell-thick CsPbBr3 QWs with lengths over a hundred nanometers. The surfactant-directed oriented attachment growth mechanism was proposed to explain the formation of such CsPbBr3 QWs. Owing to the strong quantum confinement effect, the photoluminescence (PL) emission peak of few-unit-cell-thick CsPbBr3 QWs blue-shifted to 430 nm. The ensemble PL quantum yield (PLQY) of the few-unit-cell-thick CsPbBr3 QWs increased to 21.13% through a simple heat-treatment process. The improvement of PLQY was ascribed to the reduction of the density of surface trap states and defect states induced by the heat-treatment process. Notably, the dependence of the bandgap on the diameter with different numbers of unit cells was presented for the first time in 1-D CsPbBr3 QWs on the basis of the produced few-unit-cell-thick CsPbBr3 QWs.

Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix

Abstract: Si quantum dots (QDs) were formed by thermal annealing the hydrogenated amorphous silicon carbide films (a-SiCx:H) with different C/Si ratio x, which were controlled by using a different gas ratio R of methane to silane during the deposition process. By adjusting x and post annealing temperature, the QD size can be changed from 1.4 to 4.2 nm accordingly, which was verified by the Raman spectra and transmission electron microscopy images. Size-dependent electroluminescence (EL) was observed, and the EL intensity was higher for the sample containing small-sized Si QDs due to the quantum confinement effect (QCE). The EL peak energy as a function of the Si QDs size was in good agreement with a modified effective mass approximation (EMA) model. The calculated finite barrier potential of the Si QDs embedded in SiC matrix is 0.4 and 0.8 eV for conduction and valence band, respectively. Moreover, the current-voltage properties and the linear relationship between the integrated EL intensity and injection current i...