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Potential well
About: Potential well is a research topic. Over the lifetime, 1430 publications have been published within this topic receiving 30812 citations.
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TL;DR: In this paper, a new class of Si-based quantum well structures (QWs), called neighboring confinement structure (NCS), was observed, which consists of a single pair of tensile−strained−Si layer and a compressivestrained Si layer sandwiched by completely relaxed Si1−xGex layer.
Abstract: Intense photoluminescence (PL) was observed from a new class of Si‐based quantum well structures (QWs), that is, neighboring confinement structure (NCS). NCS consists of a single pair of tensile‐strained‐Si layer and a compressive‐strained Si1−yGey layer sandwiched by completely relaxed Si1−xGex ( layers. In spite of the indirect band structure in real and k spaces, radiative recombination was enhanced compared with not only type‐II strained‐Si/relaxed‐Si1−xGex QWs but also type‐I strained‐Si1−yGey/relaxed‐Si1−xGex QWs. PL without phonon participation was found to dominate the spectrum possibly due to the effective carrier confinement for both electrons and holes. Quantum confinement effect was clearly observed by varying the well width, showing that the expected band alignment is realized.
41 citations
TL;DR: In this paper, Sb2O3 quantum dots (QDs) anchored graphene composites were prepared by in situ chemical route, followed by the subsequent annealing, and the resulting samples were characterized by X-ray diffraction and electron microscopy for structural and morphological analysis.
41 citations
15 Sep 2005
TL;DR: In this article, the synthesis of quasi-aligned AlN nanocones via chemical vapor deposition on the Ni-coated silicon wafer at 750°C through the reaction between AlCl 3 vapor and NH 3 /N 2 gas.
Abstract: One-dimensional aluminum nitride nanostructures have displayed superior field emission due to the combination of small or negative electron affinity and one-dimensional quantum confinement effect. Herein we report on the synthesis of quasi-aligned AlN nanocones via chemical vapor deposition on the Ni-coated silicon wafer at 750 °C through the reaction between AlCl 3 vapor and NH 3 /N 2 gas. The as-prepared hexagonal AlN nanocones grow preferentially along c -axis with the tips’ sizes of about 60 nm and the lengths up to several microns. The field emission measurement exhibits a notable electron emission with the apparent turn-on field of 17.8 V/μm, indicating their potential applications as the field emitters. Due to space charge effect, the corresponding Fowler–Nordheim plot shows a two-sectional characteristic with the field enhancement factors of 1450 and 340 at low and high electric fields, respectively.
41 citations
TL;DR: In this article, a carbothermal reduction method was used to synthesize silicon carbide (SiC) nanoparticles using polysiloxane as silicon source and phenol resin (MH) or xylene resin (YN).
Abstract: Silicon carbide (SiC) nanoparticles were successfully synthesized by using carbothermal reduction method. Nanoparticles with zincblende structure (3C-SiC) could be prepared using polysiloxane as silicon source and phenol resin (MH) or xylene resin (YN) as carbon source. The sample YN has an average grain size of 22 nm, larger than that of the sample MH (8 nm). Raman spectroscopy revealed that all nanoparticle samples contain graphitic surface carbon layers. Oxygen contamination on the nanoparticle surface could be reduced by postfluorine treatment (MH-F). But the sample MH-F showed reduced SiC crystallinity compared with the sample MH. The nanoparticle samples exhibited an intensive emission band in the blue region observed by photoluminescence (PL) spectroscopy. The bandgap energy of the nanoparticle samples is estimated to be ∼ 3 eV from the PL spectra, blueshifted by ∼0.6 eV from that of bulk 3C-SiC due to the quantum confinement effect.
41 citations
TL;DR: An anomalous nature of Raman spectral asymmetry has been reported from silicon nanowires (SiNWs) prepared from a heavily doped p-type Si wafer using a metal induced etching technique as discussed by the authors.
Abstract: An anomalous nature of Raman spectral asymmetry has been reported here from silicon nanowires (SiNWs) prepared from a heavily doped p-type Si wafer using a metal induced etching technique. Raman spectra of SiNWs prepared from two p-type Si wafers with different doping levels show different behaviors in terms of asymmetry as characterized by the asymmetry ratio. The SiNWs prepared from high doped p-type wafer show an anomaly in asymmetry in addition to the red shift and broadening of the Raman line shape due to the presence of the “FAno-quaNTUM” (FANTUM) effect. The heavy doping in the wafer provides a continuum of energy states to be available to interact with confined optic phonons which results in electron–phonon interaction. SiNWs prepared from low doped p-type wafer show a red shift and asymmetric broadening due to the quantum confinement effect alone. Careful analysis has been provided to clearly understand the role of Fano and quantum effects in p-type SiNWs with high doping and their relative contr...
41 citations