Topic
Potential well
About: Potential well is a research topic. Over the lifetime, 1430 publications have been published within this topic receiving 30812 citations.
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TL;DR: The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications.
Abstract: The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of ammonia/silane/hydrogen utilizing dual-frequency capacitively coupled plasmas with high atomic hydrogen and nitrogen radical densities. Systematic data analysis using different film and plasma characterization tools reveals that the quantum dots with different sizes exhibit size dependent film properties, which are sensitively dependent on plasma characteristics. These films exhibit intense photoluminescence in the visible range with violet to orange colors and with narrow to broad widths (∼0.3–0.9 eV). The observed luminescence behavior can come from the quantum confinement effect, quasi-direct band-to-band recombination, and variation of atomic hydrogen and nitrogen radicals in the film growth network. The high luminescence yields in the visible range of the spectrum and size-tunable low-temperature synthesis with plasma and radical control make these quantum dot films good candidates for light emitting applications.
17 citations
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TL;DR: In this article, two Ge1-xSnx/Si0.1Ge0.85Sn0.05 (x = 7.3% and 8.5%) multi-quantum wells (MQWs) based light emitting diodes (LEDs) were designed and fabricated to achieve efficient light emission in the ∼2μm wavelength band.
17 citations
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TL;DR: In this article, a comparative study of quantum confinement effect due to variation in nano crystallite size (NCS) of SiNWs samples, fabricated by SIE technique has been investigated using ultraviolet visible (UV-VIS) spectroscopy and Raman spectrograph.
17 citations
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TL;DR: In this article, a mixed mechanism combining the surface bonding states with widened bandgaps of alumina nanoparticles by the quantum confinement effect is presented, which agrees well with the observed photoluminescence results.
Abstract: We report on blue luminescence from alumina nanoparticles suspended in toluene solution. They were fabricated through ultrasonic treatment of porous anodic alumina membrane. The photoluminescence in the suspension of alumina nanoparticles shows considerable blueshift as larger particles precipitate. Transmission electron microscopy observations confirm the occurrence of the precipitation. A mixed mechanism combining the surface bonding states with widened bandgaps of alumina nanoparticles by the quantum confinement effect is presented. It agrees well with the observed photoluminescence results.
17 citations
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TL;DR: In this article, the authors have fabricated ZnO quantum dots embedded in an amorphous silicon oxide layer by atomic layer deposition (ALD) using two precursors, Zn(C2H5)2 and H2O, which infiltrate into the small voids between SiO2 nanoparticles.
Abstract: We have fabricated ZnO quantum dots embedded in an amorphous silicon oxide layer by atomic layer deposition (ALD). SiO2 nanoparticles with diameters of approximately 10 nm dispersed in isopropyl alcohol solution were spin-on coated on the Si substrate and dried in an oven. Subsequently, ALD of ZnO was performed using two precursors, Zn(C2H5)2 and H2O, which can infiltrate into the small voids between SiO2 nanoparticles. It is revealed that the deposited ZnO was uniformly embedded in the SiO2 layer as crystalline ZnO quantum dots with diameters in the range of about 3–8 nm after a high-temperature post-deposition annealing treatment. The quantum confinement effect of the ZnO dots is well manifested by a significant blue-shift of about 80 meV in the photoluminescence spectrum at room temperature. This technique is applicable to a new fabrication route of optoelectronic devices, such as UV light emitting diodes and lasers. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
17 citations