Power density

About: Power density is a research topic. Over the lifetime, 9534 publications have been published within this topic receiving 197264 citations. The topic is also known as: volumic power & volume power density.

A Quinone-Bromide Flow Battery with 1 W/cm2 Power Density

Abstract: We report the performance of a quinone-bromide redox flow battery and its dependence on electrolyte composition, flow rate, operating temperature, electrode and membrane materials and pre-treatment. The results of this study are used to develop a cell with a peak galvanic power density reaching 1.0 W/cm 2 .

Novel process for direct conversion of free energy of mixing into electric power

Abstract: Direct conversion of salinity gradients into electric power as well as production of an acid and a base, simultaneous to generation of electricity, was investigated. Devices that combined features of an electrodialytic pile with those of fuel cells or of electrochemical half cells were designed. Electrodes of the electrochemical half cells were restored to their initial condition by simple reversal of the flow pattern. Fuel cells in the investigated system used water as the fuel and air as the oxidant. Energy extracted from salinity gradients at power density of up to 1 W/m/sup 2/ of the membrane yields up to 0.6 MW of electric power per m/sup 3//s of river or brackish water. Sodium hydroxide is obtained in an amount which corresponds to the number of coulombs of electricity generated in the process. Part of the produced HCI is, however, lost.

High efficiency and/or high power density wide bandgap transistors

Abstract: Field effect transistors having a power density of greater than 40 W/mm when operated at a frequency of at least 4 GHz are provided. The power density of at least 40 W/mm may be provided at a drain voltage of 135 V. Transistors with greater than 60% PAE and a power density of at least 5 W/mm when operated at 10 GHz at drain biases from 28 V to 48 V are also provided.

Recent advances in silicon carbide MOSFET power devices

Abstract: Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by enabling superior efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the recent progress in development of 1200V SiC power MOSFETs. Two different chip sizes were fabricated and tested: 15A (0.225cm×0.45cm) and 30A (0.45cm×0.45cm) devices. First, the 30A MOSFETs were packaged as discrete components and static and switching measurements were performed. The device blocking voltage was 1200V and typical on-resistance was less than 50 mΩ with gate-source voltages of 0V and 20V, respectively. The total switching losses were 0.6 mJ, over five times lower than the competing devices. Next, a buck converter was built for evaluating long-term stability of the MOSFETs and typical switching waveforms are presented. Finally, the 15A MOSFETs were used for fabrication of 150A all-SiC modules. The module on-resistance values were in the range of 10 mQ, resulting in the best-in-class on-state voltage values of 1.5V at nominal current. The module switching losses were 2.3 mJ during turn-on and 1 mJ during turn-off, also significantly better than competing designs. The results validate performance advantages of the SiC MOSFETs, moving them a step closer to power electronics applications.