Topic
Power density
About: Power density is a research topic. Over the lifetime, 9534 publications have been published within this topic receiving 197264 citations. The topic is also known as: volumic power & volume power density.
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01 Apr 2019
TL;DR: In this article, the authors summarized the characteristics and development of the state-of-the-art GaN power devices with different structures, analyzes the research status, and forecasts the application prospect of GaN devices.
Abstract: Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high electron mobility and low dielectric constant. Compared with traditional Si devices, these advantages make it suitable for fast-switching and high-power-density power electronics converters, thus reducing the overall weight, volume and power consumption of power electronic systems. As a review paper, this paper summarizes the characteristics and development of the state-of-art GaN power devices with different structures, analyzes the research status, and forecasts the application prospect of GaN devices. In addition, the problems and challenges of GaN devices were discussed. And thanks to the advantages of GaN devices, both the power density and efficiency of motor drive system are improved, which also have been presented in this paper.
61 citations
TL;DR: In this article, a nitrogen and sulfur co-doped graphene aerogel (N/S-GA-2) was used as a low toxic precursor for high-performance supercapacitors.
61 citations
TL;DR: In this article, the Sb2Se3 films were characterized by x-ray diffraction during in situ annealing and it was shown that Sb 2Se3 can be replaced by Sb O 3 for high values of laser intensity power density excitation.
Abstract: Robust evidences are presented showing that the Raman mode around 250 cm−1 in the Sb2Se3 thin films does not belong to this binary compound. The laser power density dependence of the Raman spectrum revealed the formation of Sb2O3 for high values of laser intensity power density excitation under normal atmospheric conditions. To complement this study, the Sb2Se3 films were characterized by x-ray diffraction during in situ annealing. Both these measurements showed that the Sb2Se3 compound can be replaced by Sb2O3. A heat-assisted chemical process explains these findings. Furthermore, Raman conditions required to perform precise measurements are described.
61 citations
Patent•
07 Apr 2003
TL;DR: A hybrid electric vehicle drive system comprising a combustion engine, an electric motor and at least one nickel metal hydride battery module forming a power source for providing electric power to the electric motor is defined in this article.
Abstract: A hybrid electric vehicle drive system comprising a combustion engine, an electric motor and at least one nickel metal hydride battery module forming a power source for providing electric power to the electric motor, the at least one nickel metal battery module having a peak power density in relation to energy density as defined by: P>1,420−16E where P is the peak power density as measured in Watts/kilogram and E is the energy density as measured in Watt-hours/kilogram.
61 citations
TL;DR: In this article, a three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported, which achieves a peak 1.66-W (32.2 dBm) output power at 93 GHz in a continuous-wave mode, with an associated power added efficiency of 21% and associated power gain of 13.7 dB.
Abstract: A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. Electron-beam lithography has been employed to define a 100-nm T-shaped gate on the AlGaN/GaN HEMT structure with ultrahigh aluminum content. The MMIC PA offers a peak small signal gain of 16.7 dB in the 90–97 GHz bandwidth. Moreover, it achieves a peak 1.66-W (32.2 dBm) output power at 93 GHz in a continuous-wave mode, with an associated power added efficiency of 21% and an associated power gain of 13.7 dB. Most notably, the peak power density is 3.46 W/mm with a 480- $\mu \text{m}$ wide output stage, which exceeds 3 W/mm in AlGaN/GaN HEMT at W-band for the first time.
61 citations