Topic
Power semiconductor device
About: Power semiconductor device is a research topic. Over the lifetime, 20040 publications have been published within this topic receiving 256071 citations.
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Book•
26 Jul 1989
TL;DR: In this paper, the authors present a simulation of power switch-mode converters for zero-voltage and/or zero-current switchings in power electronic converters and systems.
Abstract: Partial table of contents: Overview of Power Semiconductor Switches Computer Simulation of Power Electronic Converters and Systems GENERIC POWER ELECTRONIC CIRCUITS dc--dc Switch-Mode Converters Resonant Converters: Zero-Voltage and/or Zero-Current Switchings POWER SUPPLY APPLICATIONS Power Conditioners and Uninterruptible Power Supplies MOTOR DRIVE APPLICATIONS dc Motor Drives Induction Motor Drives Synchronous Motor Drives OTHER APPLICATIONS Residential and Industrial Applications Optimizing the Utility Interface with Power Electronic Systems SEMICONDUCTOR DEVICES Basic Semiconductor Physics Power Diodes Power MOSFETs Thyristors Emerging Devices and Circuits PRACTICAL CONVERTER DESIGN CONSIDERATIONS Snubber Circuits Gate and Base Drive Circuits Design of Magnetic Components Index
5,911 citations
Book•
21 May 1993
TL;DR: In this article, the authors present an overview of three-phase transformers and their application in DC-DC Converters, including the following: 1. Power Semiconductor Diodes and Circuits 2. Power Transistors 3. Diode Rectifiers 4. Power Supplies. 5. DC Drives.
Abstract: 1. Introduction. 2. Power Semiconductor Diodes and Circuits. 3. Diode Rectifiers. 4. Power Transistors. 5. DC-DC Converters. 6. Pulse-width Modulated Inverters. 7. Thyristors. 8. Resonant Pulse Inverters. 9. Multilevel Inverters. 10. Controlled Rectifiers. 11. AC Voltage Controllers. 12. Static Switches. 13. Flexible AC Transmission Systems. 14. Power Supplies. 15. DC Drives. 16. AC Drives. 17. Gate Drive Circuits. 18. Protection of Devices and Circuits. Appendices: Three-phase Circuits, Magnetic Circuits, Switching Functions of Converters, DC Transient Analysis, Fourier Analysis, Thyristor Commutation Techniques, Data Sheets.
2,055 citations
TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Abstract: Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.
1,648 citations
16 Jan 2008
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
Abstract: The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance GaN-based RF power devices have made substantial progresses in the last decade This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance The reliability and manufacturing challenges are also discussed
1,503 citations