Precision rectifier

About: Precision rectifier is a research topic. Over the lifetime, 4952 publications have been published within this topic receiving 63668 citations. The topic is also known as: super diode.

A novel rectifying circuit for microwave power harvesting system

Abstract: Many researchers continue to look for novel means to harvest energy and generate power using existing sources thus eradicating the need of batteries and power supplies which only add up to the cost of the system. A rectifier is the main component in energy harvesting circuits as it converts RF energy from available sources to DC power. This article aimed at developing a novel rectifying circuit to be used in harvesting applications at a frequency of 900 MHz. Besides, it is also aimed to enhance the output voltage of Cockcroft Walton rectifier circuit and Dickson rectifier. The design is built by integrating the Cockcroft Walton rectifier, arranged in series, with the Dickson rectifier, arranged in parallel. A Schottky diode HSMS 285C is selected for designing the rectifiers circuit. A simulation of the circuit was optimized utilizing ADS 2009. The rectifiers had been fabricated on an RT/Duroid 5880 (RO5880) printed circuit board (PCB) substrate with a dielectric constant and loss tangent of 2.2 and 0.0009, respectively. Simulation and experimental results show great output thresholds for the three models. The novel rectifier had the highest efficiency and output voltage.

Synchronous rectifier circuit

Abstract: In a switching power circuit adopting the synchronous rectifying system, when a first switch is cut-off, current I L of an inducing element is maintained by a commutating diode, and the inducing element releases an energy which was stored in a conduction period of the first switch. A second switch connected in parallel to the commutating diode is conducted so as not to be overlapped with the conduction period of the first switch. In the conduction period of the second switch, the current I L does not flow through the commutating diode, and it is possible to prevent lowering of efficiency caused by forward voltage drop. An inducing element current detecting circuit monitors the current I L and, when the current I L is reversing its direction, instructs a control circuit to cut-off the second switch. As a result, no reverse current flows through the inducing element even when the load is small, thus realizing a switching power circuit always having high efficiency.

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor

Abstract: This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

A 2.5 V temperature compensated CMOS logarithmic amplifier

Abstract: A new temperature compensated low voltage current-mode CMOS logarithmic amplifier is presented. The logarithmic amplifier uses seven cascaded limiting current amplifiers for piece-wise approximation of the logarithmic function and a current peak detector for detecting signal amplitude with a dynamic range of 60 dB. The circuit uses a current reference to stabilize the temperature dependencies down to /spl plusmn/1 dB. The designed amplifier is fabricated with a 1.2 /spl mu/m CMOS process. It operates with down to a 2.2 V single supply voltage and the power consumption is 3 mW with a 2.5 V supply.

Blocking-layer rectifier

Abstract: This invention relates to a method of making a good electrical connection to the electrode of a blocking-layer rectifier, and to the blockinglayer rectifiers provided with an electrical connection obtained by this method. Blocking-layer rectifiers, such as selenium rectifiers and cuprous-oxide...