Precision rectifier

About: Precision rectifier is a research topic. Over the lifetime, 4952 publications have been published within this topic receiving 63668 citations. The topic is also known as: super diode.

Boost rectifier with half-power rated semiconductor devices

Abstract: A rectifier has two half-controlled bridge rectifiers which are connected in parallel to provide DC power to DC bus lines. Each bridge rectifier receives AC power through inductances such as series inductors or an isolation transformer with a single primary and two secondaries. Each bridge rectifier has a full bridge of diodes, with active switching devices connected in parallel with half of the diodes in the bridge. The switching devices can be controlled to provide unity power factor at the AC input lines, allowing lower rated diodes and switching devices to be used.

General self-driven synchronous rectification scheme for synchronous rectifiers having a floating gate

Abstract: A self-driven synchronous rectifier circuit having synchronous rectifiers with floating gates for a power converter or signal transformer. The circuit comprises a transformer (49, 70) having a secondary winding with a first and second terminal, a first synchronous rectifier (SQ1) coupled to the first transformer secondary winding first terminal and having a control terminal floating relative to ground and a first device circuit coupled to the first synchronous rectifier floating control terminal and controlling the first synchronous rectifier. A first control signal is coupled to the first drive circuit, where the first control signal controls the first drive circuit as a function of a polarity reversal of a voltage across the first transformer (49, 70). A second synchronous rectifier (SQ2) is coupled to the first transformer secondary winding second terminal and has a control terminal floating relative to ground. A second drive circuit is coupled to the second synchronous rectifier floating control terminal and controls the second synchronous rectifier. A second control signal is coupled to the second drive circuit, where the second control signal controls the second drive circuit as a function of a polarity reversal of a voltage across the first transformer (49, 70).

Printed Half-Wave and Full-Wave Rectifier Circuits Based on Organic Diodes

Abstract: Presently, most circuits fabricated using organic materials and printing methods have been adopted directly from solid-state inorganic electronics. However, the characteristics of organic electronic devices can differ remarkably from their inorganic equivalents, and therefore, the performance assumptions made about inorganic devices may not be applicable in organic electronics. In this paper, we report a printed diode-based half-wave rectifier having high yield, good air stability, and 3.5-V dc output at 13.56 MHz. Due to the high yield and good performance of the individual diodes, fabrication of more complex devices is possible. In order to achieve higher output power and lower ripple voltage, a printed full-wave bridge rectifier is reported. In addition, the half-wave and the full-wave rectifier circuits are consistently compared with each other. The output waveforms, voltages, and power values are presented for both rectifying circuits. The output measurement results show that the full-wave rectifier has lower output power and lower output voltage due to the high voltage drop of the printed diodes. Therefore, the full-wave rectifier would be most useful in low-frequency applications where low ripple voltage or small capacitor area is required.

Self-Vth-Cancellation High-Efficiency CMOS Rectifier Circuit for UHF RFIDs

Abstract: A high-efficiency CMOS rectifier circuit for UHF RFID applications was developed. The rectifier utilizes a self-Vth-cancellation (SVC) scheme in which the threshold voltage of MOSFETs is cancelled by applying gate bias voltage generated from the output voltage of the rectifier itself. A very simple circuit configuration and zero power dissipation characteristics in biasing enable excellent power conversion efficiency (PCE), especially under small RF input power conditions. At higher RF input power conditions, the PCE of the rectifier automatically decreases. This is the built-in self-power-regulation function. The proposed SVC CMOS rectifier was fabricated with a 0.35-µm CMOS process and the measured performance was compared with those of conventional nMOS, pMOS, and CMOS rectifiers and other types of Vth cancellation rectifiers as well. The SVC CMOS rectifier achieves 32% of PCE at the -10dBm RF input power condition. This PCE is larger than rectifiers reported to date under this condition.

Quadband Rectifier Using Resonant Matching Networks for Enhanced Harvesting Capability

Abstract: A multiband rectifier was designed according to multiple resonator networks by simultaneously matching the rectifier at different frequencies (1.3, 1.7, 2.4, and 3.6 GHz). The rectifier can simultaneously harvest energy from RF sources at the L-band (1–2 GHz), GSM1800, Wi-Fi bands, and long-term evolution. Through sequential application of the resonator networks during the rectifier-matching process, the resonance characteristic of the resonator facilitates the nearly independent design of each matching frequency. A fabricated prototype showed a 1-V output voltage when the input power was set at −11 dBm for each of the four RF bands with a 3- $\text{k}\Omega $ load.