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Showing papers on "Process corners published in 1970"


Journal ArticleDOI
TL;DR: In this article, a new air-isolation process is described, which overcomes many of the problems of existing isolation technologies, and the fabrication of a radiation-hardened operational amplifier is described.
Abstract: A new air-isolation process is described which overcomes many of the problems of existing isolation technologies. The process consists of standard integrated circuit processing except for the p-n junction isolation process which is omitted. After metal mask, the device wafer is glass bonded face down to a supporting silicon wafer. Subsequent backlapping, masking, and mesa etching steps yield an air-isolated integrated circuit. As one application of this technology, the fabrication of a radiation-hardened operational amplifier is described.

3 citations


Proceedings ArticleDOI
01 Jan 1970
TL;DR: In this article, a technique for probing monolithic devices before they are diced and scribed at frequencies in excess of 2 GHz is presented, where small or large-signal device parameters can be measured and enough measurements made on the wafer to obtain statistical information regarding the circuit or device.
Abstract: A technique has been developed for probing monolithic devices before they are diced and scribed at frequencies in excess of 2 GHz. Small- or large-signal device parameters can be measured and enough measurements made on the wafer to obtain statistical information regarding the circuit or device. The advantages of the system are accuracy, speed, repeatability, and traceability. Within minutes after the wafer processing is complete you can know if the units are good or not and also how good.

1 citations