Showing papers on "Process corners published in 1982"

Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

Abstract: An electrical testing structure and method whereby a test structure is fabricated on, e.g., a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

Digital semiconductor integrated circuit device

Abstract: A digital semiconductor integrated circuit device comprising a common semiconductor substrate, a dynamic MOS circuit block (10) comprising a MOS-FET, and a static bipolar circuit block (12) comprising a bipolar transistor or an SIT which is operated in a "bipolar mode" and cascade-connected to said dynamic MOS circuit block (10) in said common semiconductor substrate. The device is such that, by setting the timing of clock pulses, the logical operations of these circuit blocks are performed in a timed relationship with each other. Thus, this integrated circuit device can be produced with minimized dependency of its operation velocity upon the design of these circuit blocks and can perform a high-speed operation and can provide a high packing density.