Showing papers on "Process corners published in 1987"

Manufacture of semiconductor integrated circuit chip

Abstract: PURPOSE: To eliminate a disadvantage in which a test is required for a long time by forming a voltage applying high temperature testing electrode and a wiring layer on a semiconductor wafer, and conducting the test by applying a predetermined voltage before a semiconductor integrated circuit chip is divided CONSTITUTION: A voltage applying high temperature test for externally applying a predetermined voltage to voltage applying high temperature tests 7, 8 formed on a semiconductor wafer 1 and heating them at a high temperature in a state that the voltage is applied through voltage applying high temperature testing wiring layers 4, 10 between power electrodes 2 and 3 of many semiconductor integrated circuits 6 is conducted Then, measurements for deciding the propriety of the many circuits 6 are conducted by using the electrodes 2, 3, a signal inputting electrode 4, a signal outputting electrode 5 Thereafter, the wafer 1 is divided along a dividing line 11 to many semiconductor integrated circuit chips 14 containing many semiconductor integrated circuit forming regions formed with many semiconductor integrated circuits COPYRIGHT: (C)1988,JPO&Japio