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Showing papers on "Process corners published in 1988"


Patent
04 Mar 1988
TL;DR: In this article, a switch control circuit selectively switches the switch circuit ON or OFF so that defective circuit blocks may be deactivated in a semiconductor integrated circuit chip or semiconductor wafer.
Abstract: In a semiconductor integrated circuit, power lines or ground lines of a plurality of circuit blocks having equivalent functions are coupled via a switch circuit to a common main power line or main ground line on a semiconductor integrated circuit chip or semiconductor wafer. The main power line is supplied with power source potential and said main ground line with ground potential. A switch control circuit selectively switches the switch circuit ON or OFF so that defective circuit blocks may be deactivated.

19 citations


Proceedings ArticleDOI
12 Sep 1988
TL;DR: In this paper, a corners methodology for Bi-CMOS is derived using CMOS corners as the basis, and five corners for each of the four axis corners are coupled with two bipolar corners per CMOS corner.
Abstract: A corners methodology for BiCMOS is derived using CMOS corners as the basis. Five corners for CMOS are proposed. Coupled to the four axis corners are two bipolar corners per CMOS corner. This implies that for BiCMOS there are a total of nine possible transistor corners that are superimposed on temperature, voltage, and resistor variation. Physical correlation between MOS and bipolar parameters is taken into account by using numerical and analytical techniques. Both lithographic and diffusion/film variations are accounted for in the methodology. Using the described approach, nonphysical corners are eliminated and the total number of possibilities is restricted to those of practical interest. Resulting corners circuit simulations clearly show the advantage of using physically based worst-case process files. Also demonstrated is the robustness of the basic BiCMOS gate with respect to worst-case process files and temperature. >

10 citations