Showing papers on "Process corners published in 1991"

Integrated circuit having a built-in noise filter

Abstract: A semiconductor integrated circuit comprising a semiconductor chip provided within a package, inner leads connected to the semiconductor chip, and a high-frequency noise filter connected to the inner leads. The semiconductor chip includes a high-frequency circuit. Thereby, this semiconductor integrated circuit prevents an around circuit from being damaged by high-frequency noise generated from the high-frequency circuit, without installing the noise filter around the semiconductor integrated circuit.

Semiconductor integrated circuit and a method of testing the same

Abstract: A semiconductor integrated circuit has a main circuit (1), a self testing circuit (2) for testing the main circuit (1), a test start signal detection circuit (5) having at least one light sensitive device for detecting a test start signal in the form of light, and a test result output circuit (4) having at least one light emitting device for outputting test results from the self testing circuit (2) in the form of light. A drastic reduction in test time is accomplished by applying the test start signal in a non-contacting manner to the semiconductor integrated circuit so as to activate the self testing circuit. Furthermore, the test result is output to the outside of the semiconductor integrated circuit without having to provide electrical connections, and the simultaneous testing of a greater number of semiconductor integrated circuits as formed on the same wafer can be accomplished.

Semiconductor wafer processing device

Abstract: PURPOSE:To enable a semiconductor wafer processing device to accurately process a semiconductor wafer by a method wherein the semiconductor wafer is kept constant in temperature. CONSTITUTION:A semiconductor wafer 6 is placed on a lower electrode 4, an opening is provided inside the lower electrode 4, cooling gas is made to flow through the opening 8 at the flow rate determined by a mass flow controller 10 to directly cool the semiconductor wafer 6 from its rear side, and furthermore coolant is made to flow through a coolant path 11 to indirectly cool the semiconductor wafer 6 from its rear surface. A fluorescent thermometer 12 is buried into the lower electrode 4, the measurement output of the thermometer 12 is given to the mass flow controller 10, the controller 10 keeps the semiconductor wafer 6 constant in temperature responding to the measurement output concerned or controls the coolant in temperature basing on the measurement output to keep the temperature of the semiconductor wafer 6 constant.

Semiconductor integrated circuit and method of manufacturing the same.

Abstract: In a semiconductor integrated circuit wherein a bipolar transistor and an insulated gate type complementary transistor are formed on a single semiconductor chip, the insulated gate type complementary transistor is formed in an island-shaped epitaxial layer (4) which is completely isolated from a semiconductor substrate (1) and the other part of the circuit and which has a conductivity type (N) opposite to that (P) of the semiconductor substrate, and an electrode (176) is formed in contact with a region (62) for isolating the islandshaped epitaxial layer from the other part of the circuit. In the semiconductor integrated circuit, since the CMOS circuit is formed in the island-shaped epitaxial layer isolated completely from the semiconductor substrate and the other part of the circuit, noise occurring in the CMOS circuit does not adversely affect the bipolar circuit. Thus, the operation margin of the semiconductor integrated circuit is increased, and the malfunction of the circuit can be prevented.