Showing papers on "Process corners published in 1995"

Electromagnetic wave suppression method in a semiconductor manufacturing process

Abstract: A method for suppressing an electromagnetic wave in a semiconductor manufacturing process contemplates diffusion of a material into a region where active elements for processing a high speed digital signal are massed. During a wafer manufacturing process, high temperature particles of the material is diffused to shield the active elements of the integrated circuit from electromagnetic waves, and the integrated circuit is packaged in a circuit interlocking a wafer chip and external electrical conducting pins emanating from the integrated circuit are wrapped with a material exhibiting a resistance varying directly with the frequency of a high frequency components of electromagnetic interference. Since a main portion is surrounded by a material for shielding an electromagnetic wave in a wafer manufacturing process and a package manufacturing process for the manufactured wafer chip, electromagnetic shielding is obtained relative to other circuits on the chip. As a result, a high frequency component can be prevented from being externally radiated.

Evidence of a correlation between process yields and reliability data for a rad-hard SOI technology

Abstract: A methodology for wafer level reliability prediction is described. Accelerated lifetests performed on specifically designed test structures allowed us to correlate reliability with elementary process yields. These elementary yields were extracted for each test structure (which characterizes a process step) from data obtained after wafer level tests. The wafer "peripheral" area, on which was detected a significant number of clustered defects at wafer level, presented few failures during the accelerated lifetest, showing that the geographical origin of the devices does not significantly affect the reliability.

Semiconductor circuit and semiconductor circuit device

Abstract: PROBLEM TO BE SOLVED: To enable a MOSFET which is lessened in threshold voltage so as to be operable on a low voltage to be lessened in leakage current while it is on standby. SOLUTION: A semiconductor circuit is equipped with MOSFETs. Two potential fixing means 6 which fix two different potentials given as source potentials to the MOSFETs 2 and 2, a Vss, and switching means 4 and 5 which switch the sources of the MOSFETs 2 and 2 to the two potential fixing means 6 or the Vss ore provided.