Process corners

About: Process corners is a research topic. Over the lifetime, 912 publications have been published within this topic receiving 9116 citations.

High density integrated circuit package architecture

Abstract: This invention relates to a high density architecture for an integrated circuit package (10) in which a plurality of circuit communication wafers (12) are disposed in a stack with a plurality of cooling plates (14) between them, and wherein circuit communication between the communication wafers (12) is provided from wafer to wafer through the cooling plates (14). In addition, the communication wafers (12) may have integrated circuit chips (18) deposited on both sides of the wafer, and chip-to-chip communication may be provided from one surface of the wafer to another through the wafer. The resulting integrated circuit package may have any desired geometrical shape and will permit heat exchange, power and data exchange to occur in three generally mutually orthogonal directions through the package.

Multi-objective optimization techniques for VLSI circuits

Abstract: The EDA design flows must be retooled to cope with the rapid increase in the number of operational modes and process corners for a VLSI circuit, which in turn results in different and sometimes conflicting design goals and requirements. Single-objective solutions to various design optimization problems, ranging from sizing and fanout optimization to technology mapping and cell placement, must hence be augmented to deal with this changing landscape. This paper starts off by presenting a variety of methods for providing analytical models for power and delay to be used in the optimization algorithms. The modeling includes non-convex and convex functional forms. Next, a class of robust and scalable methods for solving multi-objective optimization problems (MOP) in a digital circuit is presented. We present the results of a multi-objective (i.e., power dissipation and delay) gate (transistor) sizing optimization algorithm to demonstrate the effectiveness of our method. We set up the problem as a simultaneous, multi-objective optimization problem and solve it by using the Weighted Sum and Compromise Programming methods. After comparing these two methods, we present the Satisficing Trade-off Method (STOM) to find the most desirable operating point of a circuit.

Method and apparatus for detecting process sensitivity to integrated circuit layout using wafer to wafer defect inspection device

Abstract: A method and apparatus for detecting random layout structures sensitive to process induced pattern errors in semiconductor device manufacturing applies a first manufacturing process to a first wafer containing semiconductor devices. A second manufacturing process is applied to a second wafer containing semiconductor devices. The second manufacturing process is similar to, but different from the first manufacturing process. The first and second wafers are compared by image subtraction to detect systematic pattern defects in the semiconductor devices of one of the first and second wafers. After differences are detected, the layout is examined to determine whether the difference represents a defect. If so, the design rules of the layout can be changed to accommodate a wider process variation and improve processing yield.

Integrated on-chip process, temperature, and voltage sensor module

Abstract: An integrated on-chip process, temperature, and voltage sensor is provided. Further, a method to monitor a process corner, temperature, and voltage on a computer chip is provided. Further, an on-chip voltage monitor is provided. Further, a method to monitor a voltage on a section of a computer chip is provided. Further, an integrated testing module having voltage, temperature, and sensor components is provided.

Multidimensional process corner derivation using surrogate based simultaneous yield analysis

Abstract: A system and method for deriving semiconductor manufacturing process corners using surrogate simulations is disclosed. The method may be used to determine individual performance metric yields, the number of out-of-specification conditions for a given number of simulation samples, and a total yield prediction for simultaneous multi-variable conditions. A surrogate simulation model, such as a Response Surface Model, may be generated from circuit simulation data or parametric data measurements and may be executed using a large number of multi-variable sample points to determine process corners defining yield limits for a device. The model may also be used to simulate process shifts and exaggerated input ranges for critical device parameters. In some embodiments, the derived process corners may better represent physically possible worst-case process corners than traditional general-purpose process corners, and may address differences in process sensitivities for individual circuits of the device.