Process corners

About: Process corners is a research topic. Over the lifetime, 912 publications have been published within this topic receiving 9116 citations.

Design and analysis of a new sub-threshold DTMOS SRAM cell structure

Abstract: In this paper, we propose a novel dynamic threshold (DTMOS) based fully differential ten-transistor (10T) SRAM (Static Random Access Memory) cell suitable for sub-threshold operation. The structure has two inverters in addition to the conventional 6T standard cell. It provides better read current, increased read and hold static noise margins (SNM) and improved write time compared to a recently proposed sub-threshold SRAM cell. The stability of sub-threshold DTMOS SRAM to process variations is also investigated. The robust dynamic threshold based memory cell exhibits built-in process variation tolerance that gives tight SNM distribution across the process corners.

Semiconductor circuit and semiconductor circuit device

Abstract: PROBLEM TO BE SOLVED: To enable a MOSFET which is lessened in threshold voltage so as to be operable on a low voltage to be lessened in leakage current while it is on standby. SOLUTION: A semiconductor circuit is equipped with MOSFETs. Two potential fixing means 6 which fix two different potentials given as source potentials to the MOSFETs 2 and 2, a Vss, and switching means 4 and 5 which switch the sources of the MOSFETs 2 and 2 to the two potential fixing means 6 or the Vss ore provided.

Method of processing semiconductor wafer

Abstract: A method of processing a semiconductor wafer is provided. The semiconductor wafer is processed with a first process. After collecting the measured data that reflects the deviation of each part within the semiconductor wafer, the semiconductor wafer is processed with a second process according to the measured data to compensate the deviation from the first process and to correct any deviation in the semiconductor wafer.