Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a(n) research topic. Over the lifetime, 940 publication(s) have been published within this topic receiving 8508 citation(s).

Proximity effect in electron-beam lithography

Abstract: A simple technique for the computation of the proximity effect in electron‐beam lithography is presented. The calculations give results of the exposure intensity received at any given point in a pattern area using a reciprocity principle. Good agreement between the computed results and experimental data was achieved.

Point exposure distribution measurements for proximity correction in electron beam lithography on a sub‐100 nm scale

Abstract: The exposure distribution function in electron beam lithography, which is needed to perform proximity correction, is usually simulated by Monte Carlo techniques, assuming a Gaussian distribution of the primary beam. The resulting backscattered part of the exposure distribution is usually also fitted to a Gaussian term. In this paper we demonstrate a technique, using a very high contrast resist, whereby the normalized point exposure distribution can be measured experimentally, both on solid substrates which cause backscattering, and on thin substrates where backscattering is negligible. The data sets so obtained can be applied directly to proximity correction and represent the practical conditions met in pattern writing. Results are presented of the distributions obtained on silicon, gallium arsenide, and thin silicon nitride substrates at different beam energies. Significant deviations from the commonly assumed double Gaussian distributions are apparent. On GaAs substrates the backscatter distribution cannot adequately be described by a Gaussian function. Even on silicon a significant amount of exposure is found in the transition region between the two Gaussian terms. This deviation, which can be due to non‐Gaussian tails in the primary beam and to forward scattering in the resist, must be taken into account for accurate proximity correction in most submicron lithography, and certainly on the sub‐100 nm scale.

Proximity effect in electron beam lithography

Abstract: Proximity effect is the most severe factor that influences the exposure resolution of electron beam. In this paper, the mechanism of proximity effect is discussed through Monte Carlo simulation of the electron scattering processes. And effective approaches of proximity effect correction are proposed. The theoretical results of Monte Carlo simulation and experimental results show that proximity effect is determined by many factors, in addition to the shape, size and packing density of patterns, proximity effect is also dependent on processes conditions. Only on the basis of optimizing the processes conditions and mask design, the expectant purpose of proximity effect correction by software can be achieved. Proximity effect is effectively reduced through improving mask design, optimizing processes conditions and utilizing proximity effect correction software.

Corrections to proximity effects in electron beam lithography. I. Theory

Abstract: Electron lithography at micrometer dimensions suffers from a seemingly fatal problem due to proximity effects. Three corrections techniques are discussed. The self‐consistent technique computes the incident electron exposure such that identical average specific fragmentation occurs in each written shape of the pattern. A unique solution, that depends only on the form and on the magnitude of proximity function, is obtained. The unaddressed‐region compensation technique attempts to compensate for proximity effects in regions between shapes; this, however, leads to computational complexities and impracticalities. The shape‐dimension adjustment technique attempts to compute dimension of exposed shapes such that the shapes developed in the resist will have the designed dimension. A set of nonlinear (and impractical) equations are obtained in this case. The implementation of these techniques and the experimental results obtained therefrom are the subject of the two succeeding papers.

Sub-10-nm nanolithography with a scanning helium beam

Abstract: Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist.