Topic
Proximity effect (electron beam lithography)
About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.
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TL;DR: In this paper, Monte Carlo calculations and resist profile simulations show that the proximity effect can be almost entirely eliminated by using 100 keV electrons for the resist exposure, and experiments with available electron energies of 20 and 50 keV were conducted, with good agreement.
Abstract: A limiting factor in electron‐beam (e‐beam) lithography is the proximity effect. In the special case of x‐ray mask making, Monte Carlo calculations and resist profile simulations show that the proximity effect can be almost entirely eliminated by using 100 keV electrons for the resist exposure. To verify the theoretical results of the simulation, experiments with available electron energies of 20 and 50 keV were conducted, with good agreement. The poor efficiency of 100 keV electrons results in decreasing resist sensitivity. Electrons passing through the membrane hit holder parts behind it. The x‐ray radiation generated in this way was able to expose the resist from the backside of the membrane. A diffuse image of the holder parts could be seen in the resist.
3 citations
Patent•
26 Jul 2000
TL;DR: In this article, a method of reducing the optical proximity effect of an exposed etch pattern occurred during a conventional photolithography process, wherein a primary pattern according to the present invention is first divided into a plurality of sub-patterns.
Abstract: A method of reducing the optical proximity effect of an exposed etch pattern occurred during a conventional photolithography process, wherein a primary pattern according to the present invention is first divided into a plurality of sub-patterns. Each of the sub-patterns formed on a photomask is then exposed under a light source to be sequentially transferred onto a corresponding photoresist layer during a photolithography process. Subsequently, the operating parameters of a stepper used in the photolithography process such as numerical perture, coherence, intensity of energy, and intensity of light are set according to the charts as shown in FIG. 5A, 5B, 6A, 6B, and 6C to obtain desirable critical dimensions, thereby reduces the optical proximity effect. Therefore, an etch pattern with different line pitches can be successfully transferred onto a photoresist layer with each critical dimension of the different line pitches accurately met according to the present invention.
3 citations
TL;DR: In this article, the radial distribution of absorbed electron energy density in a 125 nm PMMA resist layer on thin-film/substrate targets obtained by means of Monte Carlo simulation for a zero-width -function and the following variables (i) the substrate material ( and MgO), (ii) the electron beam energy (25, 50 and 75 keV) and (iii) the film thickness d (0, 100, 200 and 300 nm)
Abstract: In this paper we approximate by the combination of double Gaussian and exponential functions the radial distributions of the absorbed electron energy density in a 125 nm PMMA resist layer on thin-film/substrate targets obtained by means of Monte Carlo simulation for a zero-width -function and the following variables (i) the substrate material ( and MgO), (ii) the electron beam energy (25, 50 and 75 keV) and (iii) the film thickness d (0, 100, 200 and 300 nm) The values of the parameters of the analytical function are calculated using an original Monte Carlo technique These values are presented in the form of 3D diagrams which show their dependences on beam energy and on high-temperature superconducting film thickness and can also be used for approximate determination of the parameters at different initial conditions
3 citations
Patent•
02 Sep 1982
TL;DR: In this paper, a fine mask pattern with high accuracy was created by fluorine containing plasma treatment two layers of high molecular bond with its upper layer patterned by charged particles and thereby making the surface layer of one of the layers resistive to dry etching.
Abstract: PURPOSE:To form a fine mask pattern with high accuracy, by fluorine containing plasma treatment two layers of high molecular bond with its upper layer patterned by charged particles and thereby making the surface layer of one of the layers resistive to dry etching. CONSTITUTION:An Az1350J layer 103 for example is coated making the surface flat on an Si substrate 101 on which an oxide film, for example is formed. After forming a pattern by electron beam exposure providing, for example, a styrene resist layer 104, an dry-etching resistive modified layer 105 is formed on the patterned surface by exposing to a plasma of, for example, CF4. Then an oxygen plasma treatment is performed by a paralled flat plate type device, and a pattern consisting of the Az1350J layer 103 is formed utilizing the difference of etching speed, followed by oxide film etching. An organic material layer having vinyl base is formed in the lower layer and a negative resist pattern of PGMA and the like is formed in the upper layer and a positive type pattern is formed in the lower layer by a similar treatment. A fine pattern is thus formed not affected by side etching or proximity effect.
3 citations
Patent•
06 Oct 1977
TL;DR: In this paper, the proximity effect is removed by bonding two patterns which are exposed within the field and extend to the adjacent fields, so that field-bonded electron beam exposure can be performed.
Abstract: PURPOSE:In bonding two patterns which are exposed within the field and extend to the adjacent fields, the proximity effect is removed, so that field-bonded electron beam exposure can be performed.
3 citations