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Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.


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Patent
11 Aug 1995
TL;DR: In this paper, an electron beam is projected through a first aperture to produce a rectangular beam, which is then directed toward a desired position of a second aperture by a shaper/deflector.
Abstract: PURPOSE:To realize shortening of exposing time and correction of proximity effect on the periphery of a pattern while preventing the resolution from lowering. CONSTITUTION:An electron beam 3 projected from an electron gun 1 passes through a first aperture to produce a rectangular beam. It is then directed toward a desired position of a second aperture 6 by a shaper/deflector 5 and the like. The second aperture 6 has openings representative of a plurality of exposing patterns. The electron beam passed through these openings is projected onto a sample 10 where a plurality of exposing patterns are formed. Only a part of patterns at the second aperture is employed for exposing the peripheral part of a pattern thus shortening the exposing time and correcting the proximity effect on the periphery of the pattern while preventing the resolution from lowering.

2 citations

Journal ArticleDOI
TL;DR: An interactive visualisation CAD package, XPROX, which has been developed to simulate and visualise the exposures of submicron pattern features in E-beam lithography, and a technique is described whereby only the critical areas are proximity corrected, thus saving significantly on computing resources and data preparation time.

2 citations

Patent
14 Sep 2006
TL;DR: In this article, a method and an apparatus for pattern data lithography of an electron beam lithographic device capable of optimally correcting proximity effects and irradiation volume within a dry plate for correct lithography is presented.
Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for pattern data lithography of an electron beam lithographic device capable of optimally correcting proximity effects and irradiation volume within a dry plate for correct lithography. SOLUTION: The method and apparatus for pattern data lithography of the electron beam lithographic device comprises normal lithographic hardware 10 for normal lithography, and a hardware data transfer 20 for correcting the proximity effects. Accumulated energy conversion table memories 27 and 27' are provided by the number of lithographic fields in the proximity effect correcting hardware. The corrected amount of the proximity effect correction by means of the table memories 27 and 27' is applied to a proximity effect correction map in the normal lithographic hardware, and shot time is adjusted for beam lithography. COPYRIGHT: (C)2006,JPO&NCIPI

2 citations

Proceedings ArticleDOI
19 Jul 1989
TL;DR: In this article, a Monte Carlo program named SEEL (Simulation of Electron Energy Loss) was developed to simulate electron trajectories in arbitrary line geometries, which was used to determine the radial exposure distribution for electron energy dissipated in resist during electron beam lithography.
Abstract: A Monte Carlo program named SEEL (Simulation of Electron Energy Loss) was developed to simulate electron trajectories in arbitrary line geometries. Submicron scale electronic structures were fabricated in order to compare the simulation with experimental results. SEEL was used to determine the radial exposure distribution for electron energy dissipated in resist during electron beam lithography. A companion program called PRESTO (PRoximity Effect Simulation TOO was developed to predict the exposure of submicron scale patterns. Exposures were made for the purpose of comparing the experimental patterns with simulations.

2 citations

Patent
24 Mar 1998
TL;DR: In this article, the authors proposed a pattern forming method in which patterns are transferred to the top of a photoresist through a photomask having patterns of the same line width at various intervals.
Abstract: PROBLEM TO BE SOLVED: To provide an easy pattern forming method by which a dimensional change due to a light proximity effect is suppressed and high dimension control precision is ensured. SOLUTION: In a pattern forming method in which patterns are transferred to the top of a photoresist through a photomask having patterns of the same line width at various intervals so that the patterns account for <50% of the area of the photomask, a photomask 10 having light transmitting parts 12 as pattern parts is used, the coherence factor of an exposure system is regulated to 0.4-0.9 and a negative photoresist is used.

2 citations


Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202234
20214
20206
20194
20186