Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.

Charged particle beam lithography system and charged particle beam lithography method

Abstract: PROBLEM TO BE SOLVED: To provide a drawing device which allows for proximity effect correction while taking account of both conditions when drawing a pattern under different drawing conditions.SOLUTION: The charged particle beam lithography system includes a block generation unit for generating a plurality of area processing blocks in a drawing region where a plurality of drawing groups of different reference exposure dose are drawn, a block generation unit for generating a plurality of proximity effect correction processing blocks for correcting proximity effect in each drawing group region, an area density calculation unit for calculating the area density of a figure pattern arranged in each area processing block, a weighting operation unit for weighting the area density by using the reference exposure dose of a corresponding drawing group region for each area processing block, and a proximity effect correction irradiation coefficient calculation unit for calculating the proximity effect correction irradiation coefficients by using the area density thus weighted for each proximity effect correction processing block.

Enhanced proximity-effect correction for VLSI patterns in electron-beam lithography

Abstract: When applying a proximity-effect correction to VLSI patterning, the major challenge is to obtain a highly accurate pattern without excessive computation. A fast correction program that has two new techniques for the proximity effect has been developed for highly accurate VLSI patterning on a negative resist. The first technique is the effective definition of sample points where energy intensity is calculated to obtain a highly accurate pattern. The second is the use of the exposure-intensity reduction rate which corresponds to a change in the pattern dimensions to reduce the computation time. A pattern accuracy of ±0.1 µm and a uniform resist of the desired thickness were obtained. The computation time is proportional to the 1.2 power of pattern density.

Dataset for Helium Ion Beam Lithography on Fullerene Molecular Resists for Sub-10 nm Patterning

Abstract: Dataset supporting: Shi, Xiaoqing et al (2016) Helium ion beam lithography on fullerene molecular resists for sub-10 nm patterning. Microelectronic Engineering.Helium ion beam lithography (HIBL) is an emerging technique that uses a sub-nanometre focused beam of helium ions generated in the helium ion microscope to expose resist. It benefits from high resolution, high sensitivity and a low proximity effect. Here we present an investigation into HIBL on a novel, negative tone fullerene-derivative molecular resist. Analysis of large area exposures reveals a sensitivity of ~40 ?C/cm2 with a 30 keV helium beam which is almost three orders of magnitude higher than the sensitivity of this resist to a 30 keV electron beam. Sparse line features with line widths of 7.3 nm are achieved on the ~10 nm thick resist. The fabrication of 8.5 half-pitched lines with good feature separation and 6 nm half-pitched lines with inferior but still resolvable separation are also shown in this study. Thus, sub-10 nm patterning with small proximity effect is demonstrated using HIBL using standard processing conditions, establishing its potential as an alternative to EBL for rapid prototyping of beyond CMOS devices.Funded by Single Nanometer Manufacturing for beyond CMOS devices (SNM, 318804), 2013 to 2016.

Method and device for electronic beam pattern generation

Abstract: PURPOSE:To provide an electronic beam pattern generation method and a device thereof which can prevent generation of graphic pattern separation, double exposure data, etc., and enables proper correction processing of proximity effect without lowering through-put even when processing data of a device pattern exceeding capacity of buffer memory. CONSTITUTION:The title device prepares exposure data from design data 1 and carries out exposure based on the exposure data. It is provided with an output means 15 which outputs exposure data by dividing the data into a plurality of exposure data files 5-1 to 5-n not exceeding capacity of a buffer memory 7 provided to the electronic beam pattern generation device after specified conversion processings 11 and 13 are performed for the design data 1.

Monte Carlo simulation of the energy dissipation profiles of 30, 50 and 100 keV incident beams in a layered structure in electron beam lithography

Abstract: This paper presents a Monte Carlo simulation of the energy dissipation profiles of 30, 50 and 100 keV incident beams in thin film (0.4μm) of electron resist, polymethyl methacrylate (PMMA), on thick silicon substrate in electron beam lithography. The radial scattering and the energy loss of incident electrons (including backscattered electrons from the substrate) are simulated under the illumination of ideal point source and Gaussian round beam spot source, and the histories of 30000–50000 electrons are computed.