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Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors considered the possibilities of combined exposure of e-beam systems working with a significant difference of primary electron energies (Gaussian beam system Raith EBPG5000+ ES − 100 keV, variable shape beam system Tesla BS600 − 15 keV) on one substrate with one resist layer for the purposes of grayscale lithography.

2 citations

Patent
04 Aug 2014
TL;DR: In this article, a charged particle beam writing apparatus includes an area density calculation unit to calculate a pattern area density weighted using a dose modulation value, which has previously been input from an outside and in which an amount of correction of a dimension variation due to a proximity effect has been included.
Abstract: A charged particle beam writing apparatus includes an area density calculation unit to calculate a pattern area density weighted using a dose modulation value, which has previously been input from an outside and in which an amount of correction of a dimension variation due to a proximity effect has been included, a fogging correction dose coefficient calculation unit to calculate a fogging correction dose coefficient for correcting a dimension variation due to a fogging effect by using the pattern area density weighted using the dose modulation value having been input from the outside, a dose calculation unit to calculates a dose of a charged particle beam by using the fogging correction dose coefficient and the dose modulation value, and a writing unit to write a pattern on a target object with the charged particle beam of the dose

2 citations

Patent
07 Sep 2001
TL;DR: In this paper, a method of modifying a photo mask pattern by using computer aided design (CAD) is described, which prevents the line end shortening effect from occurring in a subsequent trim down etching process of the original pattern performed for reducing its critical dimension.
Abstract: A method of modifying a photo mask pattern by using computer aided design (CAD) is described. The photo mask pattern is used to manufacture a photo mask for transferal to a photoresist layer formed on a surface of a semiconductor wafer so as to form a predetermined original pattern. A first modification is first performed according to an optic proximity effect, and then a second modification is performed according to a line end shortening effect. The present invention prevents the line end shortening effect from occurring in a subsequent trim down etching process of the original pattern performed for reducing its critical dimension.

2 citations

Patent
29 May 2009
TL;DR: In this article, an exposure mask for transferring a pattern onto a wafer by exposure includes: a pattern formation region 15 where a pattern 16 having a size not smaller than a resolution limit after being transferred onto the wafer, and a sub-pattern formation region 18 where a sub pattern 19 having size less than the resolution limit, on a substrate.
Abstract: PROBLEM TO BE SOLVED: To provide an exposure mask having high dimensional accuracy and to provide a method for manufacturing a semiconductor device using the exposure mask. SOLUTION: The exposure mask 1 for transferring a pattern onto a wafer by exposure includes: a pattern formation region 15 where a pattern 16 having a size not smaller than a resolution limit after being transferred onto the wafer, and a sub-pattern formation region 18 where a sub-pattern 19 having a size less than the resolution limit after being transferred onto the wafer, on a substrate 11. The sub-pattern formation region 18 is formed like a frame to surround the pattern formation region 15, and the sub-pattern 19 is separated from the pattern formation region 15 by a distance having no optical proximity effect on the pattern 16. COPYRIGHT: (C)2011,JPO&INPIT

2 citations

Journal ArticleDOI
H. Hübner1
TL;DR: In this article, a numerical algorithm is proposed that automatically compensates the proximity effect for any given structure and thus extends the applicability of direct-write electron-beam lithography into the sub-100 nm regime even for IC requirements.

2 citations


Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202234
20214
20206
20194
20186