Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.

Photo mask and method for manufacturing the same

Abstract: A photo mask and method for manufacturing the same increase the capacitance of a capacitor by improving the proximity effect of the mask pattern. The photo mask includes a transparent substrate, an opaque mask pattern (11;15;20) for defining an optical transmission area on the substrate, and an optical transmittance control film pattern (10;14;17&18) for suppressing proximity effect in the optical transmission area. The proximity effect is suppressed by forming an optical transmittance control film pattern in the transmission area between the individual portions of the opaque mask pattern, so that the mask pattern shape can be exactly transferred onto a substrate. Thus, capacitor surface area is increased thereby improving the reliability of manufacture of a semiconductor device.

The Feasibility study of KrF HT-PSM in ArF lithography process

Abstract: To print the 0.13μm logic device pattern, both KrF and ArF lithography can be used and we have two lithography processes for 0.13μm technology. In this paper, we evaluate whether ArF lithography process has enough process margin or not, when KrF HT-PSM is applied to ArF lithography processes. To estimate the feasibility of KrF HT-PSM in ArF lithography process, we simulated the change of the proximity effect according to illumination conditions and selected an optimum illumination condition. In that condition, we investigated the changes of ID bias, linearity and lineend shortening effect (LES) of minimum pattern. ID bias and CD linearity of isolated line in the ArF lithography matched well with those in KrF lithography on the optimized illumination condition. The differences of ID bias and linearity are less than 5nm. Line end CD difference between two processes is under 10nm. The ArF lithography process has enough process margins in optimized illumination condition with KrF Ht-PSM. Therefore, in the optimized illumination condition, KrF Ht-PSM can be applied to ArF lithography process to print pattern for the 0.13 μm logic device without mask revision.

Dose latitude dependency on resist contrast in e-beam mask lithography

Abstract: In mask-making process with e-beam lithography, the process capability is usually affected by exposure profile, resist contrast and development process. Dose latitude depends significantly on these three parameters. In this work, dose latitude between different resist contrasts has been experimentally studied as a function of linewidth, dose, beam size and over development magnitude using commercial PBS and ZEP 7000 resist on a photomask with 10 keV exposure. It has been found that ZEP 7000 resist with high contrast shows lower dose latitude, more sensitivity to the variation of linewidth, dose and beam size except for over development magnitude due to its relatively longer development time.

Superconducting properties of Nb, NbN, and MoN thin films grown on topological insulator Bi1.95Sb0.05Se3: a comparative study

Abstract: The superconducting properties of DC magnetron sputtered Nb, NbN, and MoN films deposited on Sb-doped bismuth selenide (BSS) topological insulator films have been studied. In this two-fold study, firstly, thick superconducting films of ∼100 nm have been studied to find the modifications in the superconducting properties of the films caused by the surface morphology of pulsed laser deposition-grown BSS substrates. A drastic suppression in the critical current density has been observed in the bilayers, which has been ascribed to the strong influence of the substrate on the morphology of the superconducting film and the consequent enhancement in the density of superconducting weak links. The temperature dependence of the critical magnetic field has been carefully analyzed within the purview of the Werthamer–Hohenberg–Helfand theory, taking into account the effects of spin paramagnetism and spin–orbit scattering. In the second part of the study, ultra-thin bilayers of NbN-BSS, with thickness of the order of the coherence length (∼5 nm), have been grown to study the superconducting properties within the proximity regime. A ∼3.5 K suppression in T c is seen in the NbN(5 nm)-BSS bilayer, due to a combination of interface roughness and superconducting proximity, while a suppression of 0.6 K has been observed in the BSS(6 nm)-NbN(5 nm) bilayer, which is surmised to be solely due to the superconducting proximity effect.