Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.

Charged beam lithography device

Abstract: PURPOSE: To set a charged beam at an arbitrary irradiation dose without changing the parameter of an optical system, and also to make it possible to correct proximity effect by a method wherein the proximity effect is corrected by relatively moving a sample stand and a lens barrel by a prescribed distance. CONSTITUTION: A laser length measuring device 13, consisting of a laser beam source 10, an interferometer 11 and a laser beam receiving part 12, is provided on the upper part of the reflection mirror 9 located on the upper surface of a sample stage 7. A laser beam 14 is projected from the laser beam source 10, and after the laser beam has been reflected by a reflection mirror 9 through the interferometer 11, it is received again as a reflected light by a laser beam receiving part 12 through the interferometer 11. The height from the reference surface of the sample 8 of the sample 7 is measured by the laser length measuring device 13, and the vertical movement of the vertical ±ΔZ of the reference surface 21 is controlled by the control mechanism 16 to be used for correction of proximity effect. As a result, a through put is improved, and the problem of dimensional error of pattern caused by proximity effect can be solved. COPYRIGHT: (C)1992,JPO&Japio

Charged particle beam lithography apparatus, and proximity effect correcting method thereof

Abstract: PROBLEM TO BE SOLVED: To reduce the load of calculation of proximity effect correction irradiation amount in a fringe region around a block frame for proximity effect correction irradiation amount calculation. SOLUTION: In a proximity effect correcting method of a charged particle beam lithography apparatus 10 that draws a plurality of patterns corresponding to a plurality of figures included in lithography data D by irradiating a sample M having its upper surface coated with a resist with a charged particle beam 10a1b, a combined block frame B2ab for proximity effect correction irradiation amount calculation is generated by combining together adjacent block frames B2a and B2b for proximity effect correction irradiation amount calculation after calculation of proximity effect correction irradiation amounts of first to m-th terms are completed, and proximity effect correction irradiation amounts of m+1-th to n-th (n: an integer of ≥3) terms for the combined block frame B2ab for proximity effect correction irradiation amount calculation are calculated. COPYRIGHT: (C)2011,JPO&INPIT

Method for forming fine patterns and photomask

Abstract: PROBLEM TO BE SOLVED: To correct the irregular size of completed exposed images caused by the light proximity effect. SOLUTION: The exposure step subjected to a photoresist film is a multiple exposure step. The conditions of exposure of one exposure step comprising the multiple exposure step are set in such a way that the larger the distance between patterns, the more enlarged the exposed image is. The conditions of exposure of the other exposure step are set in such a way that the larger the distance between patterns, the more reduced the exposed image is.

The magnitude and significance of proximity effects in electron image projector defined layers

Abstract: Electron image projection is an attractive technique for making submicron integrated circuits (IC) but long and short range proximity effects cause some pattern distortion. Long range proximity effects have now been measured and the significance of long and short range effects to IC fabrication assessed. Long range proximity exposure effects due to re‐entrant electrons are sufficiently uniform for local corrections to be unnecessary. With automatic proximity correction IC patterns could be scaled down to below 0.5 μm (1 μm pitch) even with single level resist and 20 keV electrons.

Method and apparatus for electron beam lithography

Abstract: PURPOSE:To perform ghost exposure in one lithography process by applying a pulse voltage to blanking electrodes as a voltage applied to the blanking electrodes at the time of beam blanking CONSTITUTION:When a voltage is not applied to blanking electrodes 16, an electron beam is passed through (ON) the blanking electrodes 16 and, when a predetermined voltage (blanking voltage) is applied to the electrodes 16, the beam is blanked (OFF) The predetermined voltage is applied by a blanking voltage generator composed of a pulse voltage generator 17 and a switching circuit 18 The electron beam is continuously applied to a pattern part to be lithographed and is intermittently applied in a form of pulses to a non-pattern part Therefore, the effective application time (beam dosage) at the pattern part and that at the non-pattern part can be different from each other, so that the correction of a proximity effect which can be performed by a ghost exposure method can be realized With this constitution, the pattern part and the non- pattern part can be lithographed in one lithography process