Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.

Large-area electron beam radiation exposure dose determination for microelectronics layout, involves dividing the total surface area into several disjunctive part-areas with different structural widths

Abstract: A method ascertaining the radiation dose for a layout during surface/large-area electron beam exposure processing moves on from the short-comings of the so-called CFA (conditional figure assignment) method where the surroundings around the exposed figures are not included in the 'proximity' correction and only the separate free-standing exposure figures of the layout receive a sufficiently accurate correction of the proximity effect. The procedure now requires the total surface layout (S1) having several exposure figures with different structural widths and structure spacings to be divided into several disjunctive part-surfaces or areas Fx (x equals 1...n) which differ with regard to their structural widths and structure spacing and evaluation criteria Kx to be determined for the radiation dose on each of the separate part-surfaces or areas.

Determination of Proximity Effect Parameters Based on Nonlinear Curve Fitting

Abstract: In order to determine the proximity effect parameters more accurately,the process of the electron beam scattering in solid was simulated with the optimized model of electron beam scattering and modified Monte Carlo algorithm.It was obtained that the distribution of the energy deposition of different exposure in resist.The double Gaussian fitting of energy distribution was carried out by the method of nonlinear least-squares curve fitting,which elicited the parameters(α,β and η).The comparison between the fitting parameters and the experiment results shows that the method of nonlinear least-squares curve fitting can be used to determine the parameters of proximity effect.The parameters fitting for different exposure shows the change trend of α,β and η.The increment of electron beam energy leads to the decrease of α and increase of β,while η is almost constant.The increase of resist thickness results in the increment of α,while β and η are almost invariable.The increase of substrate's atom number causes decrease of β and increment of η,while α is unchangeable.The results can not only provide theoretical guide for optimizing the exposure conditions and reducing the proximity effect in electron beam lithography,but also can quickly provide more accurate parameters for proximity effect correction.

Mask for electron beam exposure, and method and device for electron beam exposure

Abstract: PROBLEM TO BE SOLVED: To provide a proximity effect correction mask required for correcting proximity effect occurring on the periphery of an adjoining pattern drawn by using a partial collective exposure mask precisely by a partial collective exposure method, to provide a proximity effect correction method employing that mask, and to provide an electron beam exposure device performing proximity effect correction. SOLUTION: In the method for the electron beam exposure, exposure is repeated on the periphery of an adjoining pattern drawn by using a partial collective exposure mask by using an electron beam exposure mask having proximity effect correction openings arranged such that the size of the openings varies periodically at a predetermined ratio in the order of arrangement. Repeated exposure on the periphery of the pattern may be performed using a part of the electron beam exposure mask. COPYRIGHT: (C)2007,JPO&INPIT

Method of manufacturing semiconductor device, and program for forming exposure parameter

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of easily forming an appropriate exposure parameter SOLUTION: The method includes: correcting variations of a process proximity effect caused in the course of a process including a processing step other than exposing treatment in formation of a pattern on a semiconductor substrate to thereby set a target pattern after exposure to be formed on a resist for forming the pattern; adjusting the exposure parameter so that the difference between the dimension of the target pattern and the dimension of the pattern after exposure is within an allowable range; and determining, when an exposure margin calculated using the adjusted exposure parameter is within the allowable range, this exposure parameter as the exposure parameter for exposing treatment The setting of the target pattern is performed using a systematic component of the process proximity effect, and the calculation of the exposure margin is performed using a random component of the process proximity effect COPYRIGHT: (C)2010,JPO&INPIT

Chemical amplification type negative resist for argon fluoride

Abstract: PROBLEM TO BE SOLVED: To reduce the difference in resist dimensions between isolated lines and a close pattern due to light proximity effect at the time of exposure with ArF excimer laser light by incorporating a melamine crosslinking agent into a resist consisting of an alicyclic methacrylate resin, a photo-acid generating agent and a solvent. SOLUTION: The melamine crosslinking agent, preferably hexamethoxymethylmelamine is incorporated by 1-5 wt.% into a negative type resist consisting of an alicyclic methacrylate resin, a photo-acid generating agent and a solvent. The hydroxyl groups of the methacrylate resin are crosslinked by a reaction using an acid generated from the photo-acid generating agent as a catalyst, the apparent mol.wt. of the resin is considerably increased, the resin is made slightly soluble in an alkali developer and a negative type pattern is formed. The difference in resist dimensions between isolated lines and a close pattern due to light proximity effect can be considerably reduced.