Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.

Simulation of Electron Beam Exposure and Resist Processing for Nano-Patterning

Abstract: Electron beam lithography simulation is a powerful tool for the prediction of the resist profile after a complete lithographic process and the process optimization towards ultimate resolution and increased process latitude. In this chapter the structure of such a simulation tool is presented and all core modules are explained in detail along with all major approaches developed for each of them (exposure, development, thermal treatment). Finally, two particular examples are given from simulation of complex patterns in the deep sub-100 nm regime along with experimental data that confirm the accuracy and capabilities of the modern simulation tools.

Charged particle beam plotting method, charged particle beam plotter, and program

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam plotting method, and a charged particle beam plotter which can precisely acquire an amount of correction radiation of charged particle beams without dropping throughput, and a program therefor. SOLUTION: The amount of irradiation for proximity effect correction which corrects a proximity effect in the charged particle beam plotting is computed. A first amount of dimensional fluctuation in a pattern caused by a loading effect depending upon a pattern distribution of a first area is computed. A ratio, to the amount of irradiation for proximity effect correction in an area including a beam irradiation position, of the amount of irradiation for proximity effect correction in an area apart from this area by a predetermined distance is computed. A second amount of dimensional fluctuation which is the total of the first amount of dimensional fluctuation and an amount of dimensional fluctuation caused by the loading effect depending upon the pattern distribution of a second area smaller than the first area is obtained in accordance with the amount of irradiation for proximity effect correction, the first amount of dimensional fluctuation, and the ratio. An amount of irradiation for loading effect correction which corrects the obtained second amount of dimensional fluctuation is combined with the amount of irradiation for proximity effect correction. COPYRIGHT: (C)2010,JPO&INPIT

Pitch Dependence of Linewidth in the 0.25 µm Patterns Fabricated Using Positive Chemically Amplified Resist

Abstract: We investigated the proximity bias characteristic of 0.25 µ m patterns used with three types of positive chemically amplified resists of differing material and properties. To determine the proximity bias characteristics, we examined how the relationship between the pitch and the linewidth varies with post-exposure-bake (PEB) temperature and time. Our experiment revealed that each resist exhibits its own unique proximity bias characteristics. We also found that the proximity bias characteristics of the three resists depended to a large extent on the PEB temperature: the lower the PEB temperature, the greater the resemblance of the proximity bias characteristics to the optical characteristic. Considering this and using the pitch vs. linewidth curve with PEB time as a parameter, we concluded that the proximity bias characteristic of resists largely depends on the diffusion of acids and other thermal effects in the resists. These characteristics resemble optical characteristics as the PEB temperature decreases, the acids diffuse to a lesser extent, and the thermal effects decrease.

Determining method of critical dosage in electron beam writing

Abstract: PROBLEM TO BE SOLVED: To precisely determine critical dosage, by setting a specific value of dosage wherein, in a collective pattern written and developed by changing dosage, the pattern widths of the resist surface and the bottom surface become identical in the central part of the collective pattern, as the critical dosage SOLUTION: A collective pattern is constituted of the same rectangular repetition patterns which are arranged in a sufficiently wide region as compared with the spread of proximity effect in such a manner that the writing area ratio is 50% and translation symmetry is ensured The collective pattern is written Rectangles in one collective pattern are exposed with the identical dosage After the collective pattern is written and developed by changing the dosage, a value equal to one-half of the dosage wherein, the widths of the patterns of the resist surface and the bottom surface become identical in the central part of the collective pattern is set as the critical dosage

Experimental study of proximity effect corrections in electron-beam lithography

Abstract: The computer aided proximity effect correction program CAPROX has been used to correct structures written at 20 keV electron beam energy. A new method has been developed to determine proximity parameters for a given e-beam/resist/substrate system. Proximity parameters for PMMA and EBR-9 and chemically amplified negative resist AZPN114 have been determined, and compared with those obtained from the established 'doughnut method'. The new method provides more reliable and accurate values, particularly for the forward scattering range. The dependence of (alpha) , (beta) and (eta) on resist thickness was also measured and the sensitivity of proximity correction using CAPROX to variation in all three scattering parameters was demonstrated. The new method improves CD linewidth linearity and accuracy in the range 0.1 approximately equals 4.0 micrometers , achieving linewidth for both lines and gaps within 100 nm of designed size.