Proximity effect (electron beam lithography)

About: Proximity effect (electron beam lithography) is a research topic. Over the lifetime, 940 publications have been published within this topic receiving 8508 citations.

Development method and exposure transfer method of chemical amplification type resist

Abstract: PROBLEM TO BE SOLVED: To provide a method which can be applied to a case of high pattern density by preventing generation of edge roughness, while making good use of chemical amplification type resist, and suppressing pattern deformation due to proximity effect. SOLUTION: At high temperatures, PEB is performed, first. It can be restrained that generation of acid is dispersed locally, when irregularities exist in stored energy due to electron beam, on account of fine irregularities or the like of dose, when making exposure. As a result, edge roughness after resist is developed can be reduced. After the local dispersion of generation of acid is restrained by performing PEB at a high temperature, PEB is performed again at a low-temperature region. Since PEB can be executed in a region where a diffusion coefficient is low, i.e., a region where diffusion of acid hardly occurs, it can be restrained acid from diffusing into a low dose region, thereby improving the contrast of developed resist.

Method of manufacturing a photo mask for manufacturing a semiconductor device 21678/01

Abstract: A photo mask used for manufacturing a semiconductor device which can form a photoresist pattern (4) of the same width as the chrome pattern (1) of the photo mask has dummy patterns (2) of a certain width (C) chrome spaced a certain distance (B) from both sides of an isolated region of the chrome pattern, which prevents variation in width of the photoresist pattern formed on a wafer caused by the proximity effect caused by a difference in light amount at the time of exposure. Preferably the distance (B) is 0.3 to 0.8 microns and the width (C) is 0.05 to 0.2 microns.

Formation of pattern and calibration of misalignment measuring instrument and method and apparatus for measuring misalignment

Abstract: PURPOSE: To propose a method for excluding influences of a proximity effect in electron beam exposure by means of combined use of photoexposure and to improve the precision of measuring a misalignment of a pattern formed in different layers. CONSTITUTION: After electron beam exposure in the step of lithography by electron beam exposure 4, a part where a proximity effect develops in the step of corrected exposure of proximity effect 5 is subjected to photoexposure before at least development. A photomask in this case is prepared on the basis of graphic data used for electron beam exposure in the step of manufacturing a photomask for correcting proximity effect 3. In the step of corrected exposure of proximity effect 5, modulated light is used for exposure. A method for measuring a misalignment comprises determining a calibrated value from a measured value of a calibration pattern from both directions by 180° turn and adding a measured value of 0° of a measuring pattern to that value to determine a pattern misalignment. COPYRIGHT: (C)1994,JPO&Japio

Method for removing the optical proximity effect using double exposure

Abstract: PURPOSE: An optical proximity effect removal method is provided to improve an exposure process margin by removing a pattern due to a scattering bar remaining in a wafer CONSTITUTION: A first exposure process is executed by using a first photomask(100) on a wafer The first photomask comprises a main pattern(101,102,103) and a scattering bar A second exposure process is executed by using a second photomask containing the main pattern The exposed scattering bar pattern is removed by executing a developing process